Abstract
The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 6442-6447 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 47 |
| Issue number | 8 PART 1 |
| DOIs | |
| Publication status | Published - 2008 Aug 8 |
| Externally published | Yes |
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Keywords
- Atomic force microscope
- Grazing incidence X-ray diffraction
- Organosilane self-assembled monolayer
- Self-organization
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effect of reaction temperature on growth of organosilane self-assembled monolayers. / Lee, Sunhyung; Ishizaki, Takahiro; Saito, Nagahiro; Takai, Osamu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 47, No. 8 PART 1, 08.08.2008, p. 6442-6447.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of reaction temperature on growth of organosilane self-assembled monolayers
AU - Lee, Sunhyung
AU - Ishizaki, Takahiro
AU - Saito, Nagahiro
AU - Takai, Osamu
PY - 2008/8/8
Y1 - 2008/8/8
N2 - The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.
AB - The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.
KW - Atomic force microscope
KW - Grazing incidence X-ray diffraction
KW - Organosilane self-assembled monolayer
KW - Self-organization
UR - http://www.scopus.com/inward/record.url?scp=55149108346&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55149108346&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.6442
DO - 10.1143/JJAP.47.6442
M3 - Article
AN - SCOPUS:55149108346
VL - 47
SP - 6442
EP - 6447
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 PART 1
ER -