Effect of reaction temperature on growth of organosilane self-assembled monolayers

Sunhyung Lee, Takahiro Ishizaki, Nagahiro Saito, Osamu Takai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.

Original languageEnglish
Pages (from-to)6442-6447
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8
Externally publishedYes

Fingerprint

Self assembled monolayers
infrared spectroscopy
grazing incidence
liquid phases
x rays
Fourier transform infrared spectroscopy
photoelectron spectroscopy
vapor deposition
Temperature
temperature
packing density
siloxanes
diffraction
Chemical vapor deposition
Monolayers
X ray photoelectron spectroscopy
molecules
Crystalline materials
X ray diffraction
atomic force microscopy

Keywords

  • Atomic force microscope
  • Grazing incidence X-ray diffraction
  • Organosilane self-assembled monolayer
  • Self-organization

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effect of reaction temperature on growth of organosilane self-assembled monolayers. / Lee, Sunhyung; Ishizaki, Takahiro; Saito, Nagahiro; Takai, Osamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 47, No. 8 PART 1, 08.08.2008, p. 6442-6447.

Research output: Contribution to journalArticle

@article{85f93051262f4b57950f8a042cb6eb4e,
title = "Effect of reaction temperature on growth of organosilane self-assembled monolayers",
abstract = "The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, {"}self-organization{"} occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.",
keywords = "Atomic force microscope, Grazing incidence X-ray diffraction, Organosilane self-assembled monolayer, Self-organization",
author = "Sunhyung Lee and Takahiro Ishizaki and Nagahiro Saito and Osamu Takai",
year = "2008",
month = "8",
day = "8",
doi = "10.1143/JJAP.47.6442",
language = "English",
volume = "47",
pages = "6442--6447",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 PART 1",

}

TY - JOUR

T1 - Effect of reaction temperature on growth of organosilane self-assembled monolayers

AU - Lee, Sunhyung

AU - Ishizaki, Takahiro

AU - Saito, Nagahiro

AU - Takai, Osamu

PY - 2008/8/8

Y1 - 2008/8/8

N2 - The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.

AB - The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.

KW - Atomic force microscope

KW - Grazing incidence X-ray diffraction

KW - Organosilane self-assembled monolayer

KW - Self-organization

UR - http://www.scopus.com/inward/record.url?scp=55149108346&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55149108346&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.6442

DO - 10.1143/JJAP.47.6442

M3 - Article

VL - 47

SP - 6442

EP - 6447

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 1

ER -