Abstract
The effect of reaction temperature on the self-organization and growth mechanism of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAM) was investigated by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXD) measurement, Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). OTS SAM was prepared by a liquid phase method and chemical vapor deposition. In the liquid phase method, OTS SAM was prepared in the temperature range from 5 to 40 °C. In the reaction temperature range from 5 to 30 °C, OTS molecules formed domain structures early in the growth process and grew two-dimensionally on SiO2 substrates. In addition, the crystalline peaks of GIXD measurements indicated that OTS SAM prepared at lower temperatures (5-30 °C) grew in the crystalline state. Thus, "self-organization" occurred under these conditions. However, OTS SAM prepared at 40 °C showed an amorphous structure. XPS and FT-IR spectra showed that the SiO2 peak increased while reaction temperature decreased. These results indicated that the formation of a siloxane bond between OTS molecules was important for the self-organization of the OTS monolayer. In addition, FT-IR measurement indicated that the packing density of the OTS monolayer prepared at lower temperatures was higher than that prepared at higher temperatures by chemical vapor deposition.
Original language | English |
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Pages (from-to) | 6442-6447 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 47 |
Issue number | 8 PART 1 |
DOIs | |
Publication status | Published - 2008 Aug 8 |
Externally published | Yes |
Keywords
- Atomic force microscope
- Grazing incidence X-ray diffraction
- Organosilane self-assembled monolayer
- Self-organization
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)