Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura S.Kimura, K.Iwamoto K.Iwamoto, M.Kadoshima M.Kadoshima, Y.Nunoshige Y.Nunoshige, A.Ogawa A.Ogawa, T.Nabatame T.Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology
Publication statusPublished - 2006 Nov 8

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S.Kimura, S. K., K.Iwamoto, K. I., M.Kadoshima, M. K., Y.Nunoshige, Y. N., A.Ogawa, A. O., T.Nabatame, T. N., H.Ohta, H. O., A.Toriumi, A. T., T.Ohishi, T. O., & Oishi, T. (2006). Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth. 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.