Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

Paolo Mele, S. Saini, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Original languageEnglish
Article number253903
JournalApplied Physics Letters
Volume102
Issue number25
DOIs
Publication statusPublished - 2013 Jun 24
Externally publishedYes

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thin films
Seebeck effect
pulsed laser deposition
temperature
transport properties
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mele, P., Saini, S., Honda, H., Matsumoto, K., Miyazaki, K., Hagino, H., & Ichinose, A. (2013). Effect of substrate on thermoelectric properties of Al-doped ZnO thin films. Applied Physics Letters, 102(25), [253903]. https://doi.org/10.1063/1.4812401

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films. / Mele, Paolo; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

In: Applied Physics Letters, Vol. 102, No. 25, 253903, 24.06.2013.

Research output: Contribution to journalArticle

Mele, P, Saini, S, Honda, H, Matsumoto, K, Miyazaki, K, Hagino, H & Ichinose, A 2013, 'Effect of substrate on thermoelectric properties of Al-doped ZnO thin films', Applied Physics Letters, vol. 102, no. 25, 253903. https://doi.org/10.1063/1.4812401
Mele P, Saini S, Honda H, Matsumoto K, Miyazaki K, Hagino H et al. Effect of substrate on thermoelectric properties of Al-doped ZnO thin films. Applied Physics Letters. 2013 Jun 24;102(25). 253903. https://doi.org/10.1063/1.4812401
Mele, Paolo ; Saini, S. ; Honda, H. ; Matsumoto, K. ; Miyazaki, K. ; Hagino, H. ; Ichinose, A. / Effect of substrate on thermoelectric properties of Al-doped ZnO thin films. In: Applied Physics Letters. 2013 ; Vol. 102, No. 25.
@article{27ba78d74a9545e9882d07de365b77b3,
title = "Effect of substrate on thermoelectric properties of Al-doped ZnO thin films",
abstract = "We have prepared 2{\%} Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.",
author = "Paolo Mele and S. Saini and H. Honda and K. Matsumoto and K. Miyazaki and H. Hagino and A. Ichinose",
year = "2013",
month = "6",
day = "24",
doi = "10.1063/1.4812401",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

AU - Mele, Paolo

AU - Saini, S.

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Hagino, H.

AU - Ichinose, A.

PY - 2013/6/24

Y1 - 2013/6/24

N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

UR - http://www.scopus.com/inward/record.url?scp=84879871707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879871707&partnerID=8YFLogxK

U2 - 10.1063/1.4812401

DO - 10.1063/1.4812401

M3 - Article

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253903

ER -