Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

P. Mele; S. Saini; H. Honda; K. Matsumoto; K. Miyazaki; H. Hagino; A. Ichinose

doi:10.1063/1.4812401

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

P. Mele, S. Saini, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO₃ (STO) and Al₂O₃ substrates by Pulsed Laser Deposition technique at various deposition temperatures (T_dep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al₂O₃ films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10^-3 W m^-1 K^-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 ^-3 W m^-1 K^-2 at 600 K, surpassing the best AZO film previously reported in literature.

Original language	English
Article number	253903
Journal	Applied Physics Letters
Volume	102
Issue number	25
DOIs	https://doi.org/10.1063/1.4812401
Publication status	Published - 2013 Jun 24
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effect of substrate on thermoelectric properties of Al-doped ZnO thin films",

abstract = "We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.",

author = "P. Mele and S. Saini and H. Honda and K. Matsumoto and K. Miyazaki and H. Hagino and A. Ichinose",

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AU - Mele, P.

AU - Saini, S.

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Hagino, H.

AU - Ichinose, A.

PY - 2013/6/24

Y1 - 2013/6/24

N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

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