Abstract
We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.
| Original language | English |
|---|---|
| Article number | 253903 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2013 Jun 24 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Effect of substrate on thermoelectric properties of Al-doped ZnO thin films. / Mele, Paolo; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.
In: Applied Physics Letters, Vol. 102, No. 25, 253903, 24.06.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of substrate on thermoelectric properties of Al-doped ZnO thin films
AU - Mele, Paolo
AU - Saini, S.
AU - Honda, H.
AU - Matsumoto, K.
AU - Miyazaki, K.
AU - Hagino, H.
AU - Ichinose, A.
PY - 2013/6/24
Y1 - 2013/6/24
N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.
AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.
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U2 - 10.1063/1.4812401
DO - 10.1063/1.4812401
M3 - Article
AN - SCOPUS:84879871707
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253903
ER -