Effect of temperature on photoresist critical dimension during puddle development

Hideo Eto, Yasuhiro Ito, Tetsuya Homma

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.

Original languageEnglish
Pages (from-to)3354-3358
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number6 A
DOIs
Publication statusPublished - 2007 Jun 6

Fingerprint

Photoresists
photoresists
wafers
Temperature
temperature
Chucks
photographic developers
Latent heat
latent heat
dissolving
Dissolution
Evaporation
Temperature distribution
temperature distribution
Capacitance
capacitance
evaporation
heat

Keywords

  • Critical dimension
  • Evaporation latent heat
  • Puddle development
  • Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of temperature on photoresist critical dimension during puddle development. / Eto, Hideo; Ito, Yasuhiro; Homma, Tetsuya.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 6 A, 06.06.2007, p. 3354-3358.

Research output: Contribution to journalArticle

@article{03e0e357f1604fc99ceaa1c80214ad12,
title = "Effect of temperature on photoresist critical dimension during puddle development",
abstract = "We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.",
keywords = "Critical dimension, Evaporation latent heat, Puddle development, Temperature",
author = "Hideo Eto and Yasuhiro Ito and Tetsuya Homma",
year = "2007",
month = "6",
day = "6",
doi = "10.1143/JJAP.46.3354",
language = "English",
volume = "46",
pages = "3354--3358",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 A",

}

TY - JOUR

T1 - Effect of temperature on photoresist critical dimension during puddle development

AU - Eto, Hideo

AU - Ito, Yasuhiro

AU - Homma, Tetsuya

PY - 2007/6/6

Y1 - 2007/6/6

N2 - We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.

AB - We have investigated the effect of a temperature change on photoresist critical dimension (CD) in a wafer during puddle development. The wafer temperature was decreased by the evaporation latent heat of developer solution during puddle development, and the rate of temperature decrease of the peripheral area was higher than that of the central area in the wafer. The temperature of the peripheral area was approximately 1.3°C lower than that of the central area after 60 s. The temperature distribution was caused by the difference in heat capacitance in the wafer, which was mainly influenced by the wafer chuck. We investigated the influence of temperature on photoresist CD in the wafer, using a diazonaphthoquinone (DNQ)/novolac photoresist. Photoresist CD changed with temperature at a rate of approximately 5nm/°C, and the CD of the peripheral area became smaller than that of the central area over time. We can improve the CD distribution by controlling the temperature during puddle development or by using a photoresist with a dissolution rate that is less sensitive to temperature.

KW - Critical dimension

KW - Evaporation latent heat

KW - Puddle development

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=34547842153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547842153&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.3354

DO - 10.1143/JJAP.46.3354

M3 - Article

AN - SCOPUS:34547842153

VL - 46

SP - 3354

EP - 3358

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -