Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-k passivation layer

Yuuki Kawada, Hideyuki Hanawa, Kazushige Horio

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We analyze off-state breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped buffer layer where a deep acceptor located above the midgap is included. It is shown that by introducing a high-k passivation layer, the breakdown voltage Vbr improves as in a case with an undoped semi-insulating buffer layer. In the Fe-doped case, Vbr becomes a little higher in the case where the passivation layer's relative permittivity er is rather higher when the energy levels determining the Fermi level are set equal in the two buffers. It is also shown that when the energy level of deep acceptor is deeper, Vbr becomes higher in the region where er is high. This occurs because the leakage current via the buffer layer becomes smaller.

Original languageEnglish
Article number108003
JournalJapanese Journal of Applied Physics
Volume56
Issue number10
DOIs
Publication statusPublished - 2017 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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