Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-k passivation layer

Yuuki Kawada, Hideyuki Hanawa, Kazushige Horio

Research output: Research - peer-reviewArticle

Abstract

We analyze off-state breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped buffer layer where a deep acceptor located above the midgap is included. It is shown that by introducing a high-k passivation layer, the breakdown voltage Vbr improves as in a case with an undoped semi-insulating buffer layer. In the Fe-doped case, Vbr becomes a little higher in the case where the passivation layer's relative permittivity er is rather higher when the energy levels determining the Fermi level are set equal in the two buffers. It is also shown that when the energy level of deep acceptor is deeper, Vbr becomes higher in the region where er is high. This occurs because the leakage current via the buffer layer becomes smaller.

LanguageEnglish
Article number108003
JournalJapanese Journal of Applied Physics
Volume56
Issue number10
DOIs
StatePublished - 2017 Oct 1

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High electron mobility transistors
Buffer layers
Passivation
high electron mobility transistors
passivity
buffers
breakdown
Electron energy levels
energy levels
Fermi level
Electric breakdown
Leakage currents
Permittivity
electrical faults
leakage
permittivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "We analyze off-state breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped buffer layer where a deep acceptor located above the midgap is included. It is shown that by introducing a high-k passivation layer, the breakdown voltage Vbr improves as in a case with an undoped semi-insulating buffer layer. In the Fe-doped case, Vbr becomes a little higher in the case where the passivation layer's relative permittivity er is rather higher when the energy levels determining the Fermi level are set equal in the two buffers. It is also shown that when the energy level of deep acceptor is deeper, Vbr becomes higher in the region where er is high. This occurs because the leakage current via the buffer layer becomes smaller.",
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