Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes

S. Arulkumaran, T. Egawa, H. Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

65 Citations (Scopus)
Original languageEnglish
Pages (from-to)573-580
JournalDefault journal
Volume48
Publication statusPublished - 2001 Mar 1

Cite this

Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M., & Jimbo, T. (2001). Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. Default journal, 48, 573-580.

Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. / Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Umeno, M.; Jimbo, T.

In: Default journal, Vol. 48, 01.03.2001, p. 573-580.

Research output: Contribution to journalArticle

Arulkumaran, S, Egawa, T, Ishikawa, H, Umeno, M & Jimbo, T 2001, 'Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes', Default journal, vol. 48, pp. 573-580.
Arulkumaran S, Egawa T, Ishikawa H, Umeno M, Jimbo T. Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. Default journal. 2001 Mar 1;48:573-580.
Arulkumaran, S. ; Egawa, T. ; Ishikawa, H. ; Umeno, M. ; Jimbo, T. / Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. In: Default journal. 2001 ; Vol. 48. pp. 573-580.
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