| Original language | English |
|---|---|
| Pages (from-to) | 573-580 |
| Journal | Default journal |
| Volume | 48 |
| Publication status | Published - 2001 Mar 1 |
Cite this
Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M., & Jimbo, T. (2001). Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. Default journal, 48, 573-580.
Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. / Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Umeno, M.; Jimbo, T.
In: Default journal, Vol. 48, 01.03.2001, p. 573-580.Research output: Contribution to journal › Article
Arulkumaran, S, Egawa, T, Ishikawa, H, Umeno, M & Jimbo, T 2001, 'Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes', Default journal, vol. 48, pp. 573-580.
Arulkumaran S, Egawa T, Ishikawa H, Umeno M, Jimbo T. Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. Default journal. 2001 Mar 1;48:573-580.
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title = "Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes",
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AU - Umeno, M.
AU - Jimbo, T.
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