Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes

S. Arulkumaran, T. Egawa, H. Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

66 Citations (Scopus)
Original languageEnglish
Pages (from-to)573-580
JournalDefault journal
Volume48
Publication statusPublished - 2001 Mar 1

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Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M., & Jimbo, T. (2001). Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. Default journal, 48, 573-580.