| Original language | English |
|---|---|
| Pages (from-to) | 573-580 |
| Journal | Default journal |
| Volume | 48 |
| Publication status | Published - 2001 Mar 1 |
Cite this
Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M., & Jimbo, T. (2001). Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes. Default journal, 48, 573-580.