Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes

S. Arulkumaran; T. Egawa; H. Ishikawa; M. Umeno; T. Jimbo

doi:10.1109/16.906453

Effects of annealing on Ti, Pd, and Ni/n-Al_0.11Ga_0.89N Schottky diodes

S. Arulkumaran, T. Egawa, H. Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

Schottky diodes of Ti, Pd, and Ni/n-Al_0.11Ga_0.89N have been fabricated and the barrier heights were measured to be 0.60, 0.95 and 0.97 eV using current-voltage (I-V) measurements and to be 0.67, 1.15 and 1.22 eV using capacitance-voltage (C-V) measurements. Annealed Schottky diodes are showing higher I-V and C-V barrier heights when compared with as-deposited Schottky diodes except high temperature annealed (450°C/30 min-500°C/1 hr) Ti Schottky diodes. I-V barrier height of Ti/n-Al_0.11Ga_0.89N increases up to the annealing temperature 350°C/5 min and it decreased for higher annealing temperatures. C-V barrier height increases up to the annealing temperature 150°C/5 min for Ti (1.63 eV), 250°C/5 min for both Pd (1.68 eV) and Ni (1.54 eV) Schottky diodes respectively. The increase of barrier heights for low temperature annealing is due to intimate contact between metal and semiconductor. Rectifying behavior has been observed up to the annealing temperature 450°C/1 hr for Ni/n-Al_0.11Ga_0.89N and 500°C/1 hr for both Ti and Pd/n-Al_0.11Ga_0.89N Schottky diodes. An increase of surface average roughness has been observed for the annealed Pd and Ni Schottky diodes except Ti Schottky diodes. Al_0.11Ga_0.89N surface behaves more like ceramic with both Pd and Ni than semiconductor.

Original language	English
Pages (from-to)	573-580
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/16.906453
Publication status	Published - 2001 Mar
Externally published	Yes

Keywords

AFM
AlGaN
Annealing
Schottky diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.906453

Cite this

@article{4c1fe9ea999745d5a9b4db1c3ebc87ad,

title = "Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes",

abstract = "Schottky diodes of Ti, Pd, and Ni/n-Al0.11Ga0.89N have been fabricated and the barrier heights were measured to be 0.60, 0.95 and 0.97 eV using current-voltage (I-V) measurements and to be 0.67, 1.15 and 1.22 eV using capacitance-voltage (C-V) measurements. Annealed Schottky diodes are showing higher I-V and C-V barrier heights when compared with as-deposited Schottky diodes except high temperature annealed (450°C/30 min-500°C/1 hr) Ti Schottky diodes. I-V barrier height of Ti/n-Al0.11Ga0.89N increases up to the annealing temperature 350°C/5 min and it decreased for higher annealing temperatures. C-V barrier height increases up to the annealing temperature 150°C/5 min for Ti (1.63 eV), 250°C/5 min for both Pd (1.68 eV) and Ni (1.54 eV) Schottky diodes respectively. The increase of barrier heights for low temperature annealing is due to intimate contact between metal and semiconductor. Rectifying behavior has been observed up to the annealing temperature 450°C/1 hr for Ni/n-Al0.11Ga0.89N and 500°C/1 hr for both Ti and Pd/n-Al0.11Ga0.89N Schottky diodes. An increase of surface average roughness has been observed for the annealed Pd and Ni Schottky diodes except Ti Schottky diodes. Al0.11Ga0.89N surface behaves more like ceramic with both Pd and Ni than semiconductor.",

keywords = "AFM, AlGaN, Annealing, Schottky diode",

author = "S. Arulkumaran and T. Egawa and H. Ishikawa and M. Umeno and T. Jimbo",

note = "Funding Information: S. Arulkumaran would like to thank the Japan Society for the Promotion of Science for the Award of JSPS Post-Doctoral Research Fellowship 1999–2001. The authors would like to thank Y. Fujimoto for AES measurements.",

year = "2001",

month = mar,

doi = "10.1109/16.906453",

language = "English",

volume = "48",

pages = "573--580",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Umeno, M.

AU - Jimbo, T.

N1 - Funding Information: S. Arulkumaran would like to thank the Japan Society for the Promotion of Science for the Award of JSPS Post-Doctoral Research Fellowship 1999–2001. The authors would like to thank Y. Fujimoto for AES measurements.

PY - 2001/3

Y1 - 2001/3

N2 - Schottky diodes of Ti, Pd, and Ni/n-Al0.11Ga0.89N have been fabricated and the barrier heights were measured to be 0.60, 0.95 and 0.97 eV using current-voltage (I-V) measurements and to be 0.67, 1.15 and 1.22 eV using capacitance-voltage (C-V) measurements. Annealed Schottky diodes are showing higher I-V and C-V barrier heights when compared with as-deposited Schottky diodes except high temperature annealed (450°C/30 min-500°C/1 hr) Ti Schottky diodes. I-V barrier height of Ti/n-Al0.11Ga0.89N increases up to the annealing temperature 350°C/5 min and it decreased for higher annealing temperatures. C-V barrier height increases up to the annealing temperature 150°C/5 min for Ti (1.63 eV), 250°C/5 min for both Pd (1.68 eV) and Ni (1.54 eV) Schottky diodes respectively. The increase of barrier heights for low temperature annealing is due to intimate contact between metal and semiconductor. Rectifying behavior has been observed up to the annealing temperature 450°C/1 hr for Ni/n-Al0.11Ga0.89N and 500°C/1 hr for both Ti and Pd/n-Al0.11Ga0.89N Schottky diodes. An increase of surface average roughness has been observed for the annealed Pd and Ni Schottky diodes except Ti Schottky diodes. Al0.11Ga0.89N surface behaves more like ceramic with both Pd and Ni than semiconductor.

AB - Schottky diodes of Ti, Pd, and Ni/n-Al0.11Ga0.89N have been fabricated and the barrier heights were measured to be 0.60, 0.95 and 0.97 eV using current-voltage (I-V) measurements and to be 0.67, 1.15 and 1.22 eV using capacitance-voltage (C-V) measurements. Annealed Schottky diodes are showing higher I-V and C-V barrier heights when compared with as-deposited Schottky diodes except high temperature annealed (450°C/30 min-500°C/1 hr) Ti Schottky diodes. I-V barrier height of Ti/n-Al0.11Ga0.89N increases up to the annealing temperature 350°C/5 min and it decreased for higher annealing temperatures. C-V barrier height increases up to the annealing temperature 150°C/5 min for Ti (1.63 eV), 250°C/5 min for both Pd (1.68 eV) and Ni (1.54 eV) Schottky diodes respectively. The increase of barrier heights for low temperature annealing is due to intimate contact between metal and semiconductor. Rectifying behavior has been observed up to the annealing temperature 450°C/1 hr for Ni/n-Al0.11Ga0.89N and 500°C/1 hr for both Ti and Pd/n-Al0.11Ga0.89N Schottky diodes. An increase of surface average roughness has been observed for the annealed Pd and Ni Schottky diodes except Ti Schottky diodes. Al0.11Ga0.89N surface behaves more like ceramic with both Pd and Ni than semiconductor.

KW - AFM

KW - AlGaN

KW - Annealing

KW - Schottky diode

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U2 - 10.1109/16.906453

DO - 10.1109/16.906453

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SN - 0018-9383

VL - 48

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EP - 580

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

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