Effects of annealing temperature on thermoelectric properties of Bi                          2                         Te                         3                          films prepared by co-sputtering

Xing Wang; Hongcai He; Ning Wang; Lei Miao

doi:10.1016/j.apsusc.2013.03.130

Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering

Xing Wang, Hongcai He, Ning Wang, Lei Miao

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

N-type thermoelectric bismuth telluride (Bi ₂ Te ₃ ) films were grown on SiO ₂ /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi ₂ Te ₃ films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K ² cm, respectively, obtained at the annealing temperature of 300 C.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	Applied Surface Science
Volume	276
DOIs	https://doi.org/10.1016/j.apsusc.2013.03.130
Publication status	Published - 2013 Jul 1
Externally published	Yes

Keywords

Annealing temperature
Bismuth telluride
Co-sputtering
Thermoelectric thin film

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Wang, X., He, H., Wang, N., & Miao, L. (2013). Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering Applied Surface Science, 276, 539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering . / Wang, Xing; He, Hongcai; Wang, Ning; Miao, Lei.

In: Applied Surface Science, Vol. 276, 01.07.2013, p. 539-542.

Research output: Contribution to journal › Article

Wang, X, He, H, Wang, N & Miao, L 2013, ' Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering ', Applied Surface Science, vol. 276, pp. 539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

Wang X, He H, Wang N, Miao L. Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering Applied Surface Science. 2013 Jul 1;276:539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

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title = " Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering ",

abstract = " N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.",

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AU - Wang, Xing

AU - He, Hongcai

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N2 - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

AB - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

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