TY - JOUR
T1 - Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering
AU - Wang, Xing
AU - He, Hongcai
AU - Wang, Ning
AU - Miao, Lei
N1 - Funding Information:
This work was supported by Natural Science Foundation of China ( 51002020 , 51272035 , 51272037 ), International Cooperation MOST-JST Program Fund (No. 2010DFA61410 ), The Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530 ), Sichuan International Science & Technology Cooperation and Communication Research Program (No. 2011HH0002 ). Fundamental Research Funds for the Central Universities (No. ZYGX2010Z003 ).
PY - 2013/7/1
Y1 - 2013/7/1
N2 - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.
AB - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.
KW - Annealing temperature
KW - Bismuth telluride
KW - Co-sputtering
KW - Thermoelectric thin film
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U2 - 10.1016/j.apsusc.2013.03.130
DO - 10.1016/j.apsusc.2013.03.130
M3 - Article
AN - SCOPUS:84877576930
SN - 0169-4332
VL - 276
SP - 539
EP - 542
JO - Applied Surface Science
JF - Applied Surface Science
ER -