Effects of annealing temperature on thermoelectric properties of Bi                          2                         Te                         3                          films prepared by co-sputtering

Xing Wang; Hongcai He; Ning Wang; Lei Miao

doi:10.1016/j.apsusc.2013.03.130

Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering

Xing Wang, Hongcai He, Ning Wang, Lei Miao

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

N-type thermoelectric bismuth telluride (Bi ₂ Te ₃ ) films were grown on SiO ₂ /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi ₂ Te ₃ films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K ² cm, respectively, obtained at the annealing temperature of 300 C.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	Applied Surface Science
Volume	276
DOIs	https://doi.org/10.1016/j.apsusc.2013.03.130
Publication status	Published - 2013 Jul 1
Externally published	Yes

Keywords

Annealing temperature
Bismuth telluride
Co-sputtering
Thermoelectric thin film

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2013.03.130

Cite this

Wang, X., He, H., Wang, N., & Miao, L. (2013). Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering Applied Surface Science, 276, 539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering . / Wang, Xing; He, Hongcai; Wang, Ning et al.

In: Applied Surface Science, Vol. 276, 01.07.2013, p. 539-542.

Research output: Contribution to journal › Article › peer-review

Wang, X, He, H, Wang, N & Miao, L 2013, ' Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering ', Applied Surface Science, vol. 276, pp. 539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

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title = " Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering ",

abstract = " N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.",

keywords = "Annealing temperature, Bismuth telluride, Co-sputtering, Thermoelectric thin film",

author = "Xing Wang and Hongcai He and Ning Wang and Lei Miao",

note = "Funding Information: This work was supported by Natural Science Foundation of China ( 51002020 , 51272035 , 51272037 ), International Cooperation MOST-JST Program Fund (No. 2010DFA61410 ), The Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530 ), Sichuan International Science & Technology Cooperation and Communication Research Program (No. 2011HH0002 ). Fundamental Research Funds for the Central Universities (No. ZYGX2010Z003 ).",

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AU - Wang, Xing

AU - He, Hongcai

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AU - Miao, Lei

N1 - Funding Information: This work was supported by Natural Science Foundation of China ( 51002020 , 51272035 , 51272037 ), International Cooperation MOST-JST Program Fund (No. 2010DFA61410 ), The Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530 ), Sichuan International Science & Technology Cooperation and Communication Research Program (No. 2011HH0002 ). Fundamental Research Funds for the Central Universities (No. ZYGX2010Z003 ).

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N2 - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

AB - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

KW - Annealing temperature

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KW - Co-sputtering

KW - Thermoelectric thin film

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