Effects of annealing temperature on thermoelectric properties of Bi                          2                         Te                         3                          films prepared by co-sputtering

Xing Wang; Hongcai He; Ning Wang; Lei Miao

doi:10.1016/j.apsusc.2013.03.130

Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering

Xing Wang, Hongcai He, Ning Wang, Lei Miao

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

N-type thermoelectric bismuth telluride (Bi ₂ Te ₃ ) films were grown on SiO ₂ /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi ₂ Te ₃ films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K ² cm, respectively, obtained at the annealing temperature of 300 C.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	Applied Surface Science
Volume	276
DOIs	https://doi.org/10.1016/j.apsusc.2013.03.130
Publication status	Published - 2013 Jul 1
Externally published	Yes

Keywords

Annealing temperature
Bismuth telluride
Co-sputtering
Thermoelectric thin film

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2013.03.130

Cite this

Wang, X., He, H., Wang, N., & Miao, L. (2013). Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering Applied Surface Science, 276, 539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering . / Wang, Xing; He, Hongcai; Wang, Ning; Miao, Lei.

In: Applied Surface Science, Vol. 276, 01.07.2013, p. 539-542.

Research output: Contribution to journal › Article › peer-review

Wang, X, He, H, Wang, N & Miao, L 2013, ' Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering ', Applied Surface Science, vol. 276, pp. 539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

Wang X, He H, Wang N, Miao L. Effects of annealing temperature on thermoelectric properties of Bi ₂ Te ₃ films prepared by co-sputtering Applied Surface Science. 2013 Jul 1;276:539-542. https://doi.org/10.1016/j.apsusc.2013.03.130

@article{754a2be0d3ce40fd937c11bd63988962,

title = " Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering ",

abstract = " N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.",

keywords = "Annealing temperature, Bismuth telluride, Co-sputtering, Thermoelectric thin film",

author = "Xing Wang and Hongcai He and Ning Wang and Lei Miao",

note = "Funding Information: This work was supported by Natural Science Foundation of China ( 51002020 , 51272035 , 51272037 ), International Cooperation MOST-JST Program Fund (No. 2010DFA61410 ), The Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530 ), Sichuan International Science & Technology Cooperation and Communication Research Program (No. 2011HH0002 ). Fundamental Research Funds for the Central Universities (No. ZYGX2010Z003 ).",

year = "2013",

month = jul,

day = "1",

doi = "10.1016/j.apsusc.2013.03.130",

language = "English",

volume = "276",

pages = "539--542",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering

AU - Wang, Xing

AU - He, Hongcai

AU - Wang, Ning

AU - Miao, Lei

N1 - Funding Information: This work was supported by Natural Science Foundation of China ( 51002020 , 51272035 , 51272037 ), International Cooperation MOST-JST Program Fund (No. 2010DFA61410 ), The Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530 ), Sichuan International Science & Technology Cooperation and Communication Research Program (No. 2011HH0002 ). Fundamental Research Funds for the Central Universities (No. ZYGX2010Z003 ).

PY - 2013/7/1

Y1 - 2013/7/1

N2 - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

AB - N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

KW - Annealing temperature

KW - Bismuth telluride

KW - Co-sputtering

KW - Thermoelectric thin film

UR - http://www.scopus.com/inward/record.url?scp=84877576930&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877576930&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2013.03.130

DO - 10.1016/j.apsusc.2013.03.130

M3 - Article

AN - SCOPUS:84877576930

VL - 276

SP - 539

EP - 542

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -