Effects of annealing temperature on thermoelectric properties of Bi 2 Te 3 films prepared by co-sputtering

Xing Wang, Hongcai He, Ning Wang, Lei Miao

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150-350 C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly improved by increasing the annealing temperature, giving rise to the enhanced charge carrier mobility. It is found that the optimum of Seebeck coefficient and power factor was about -242 μV/K and 21 μW/K 2 cm, respectively, obtained at the annealing temperature of 300 C.

Original languageEnglish
Pages (from-to)539-542
Number of pages4
JournalApplied Surface Science
Volume276
DOIs
Publication statusPublished - 2013 Jul 1
Externally publishedYes

Keywords

  • Annealing temperature
  • Bismuth telluride
  • Co-sputtering
  • Thermoelectric thin film

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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