Effects of Argon Gas Flow Rate and Furnace Pressure on Oxygen Concentration in Czochralski-Grown Silicon Crystals

Masahiro Shoji, Naoki Ono, Keisei Abe, Michio Kida, Yasuo Shimizu

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)362-368
JournalJournal of Crystal Growth
Volume186
Publication statusPublished - 1997 Aug 28

Cite this

Effects of Argon Gas Flow Rate and Furnace Pressure on Oxygen Concentration in Czochralski-Grown Silicon Crystals. / Shoji, Masahiro; Ono, Naoki; Abe, Keisei; Kida, Michio; Shimizu, Yasuo.

In: Journal of Crystal Growth, Vol. 186, 28.08.1997, p. 362-368.

Research output: Contribution to journalArticle

Shoji, Masahiro ; Ono, Naoki ; Abe, Keisei ; Kida, Michio ; Shimizu, Yasuo. / Effects of Argon Gas Flow Rate and Furnace Pressure on Oxygen Concentration in Czochralski-Grown Silicon Crystals. In: Journal of Crystal Growth. 1997 ; Vol. 186. pp. 362-368.
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AU - Ono, Naoki

AU - Abe, Keisei

AU - Kida, Michio

AU - Shimizu, Yasuo

PY - 1997/8/28

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