Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer

Y. Kawada, H. Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We analyze AlGaN/GaN HEMTs with a buffer layer where a deep acceptor above the midgap is considered, and studied how the off-state breakdown voltage is influenced by introducing a high-k passivation layer. As a result, it is shown that the breakdown voltage improves as in a case with a deep donor whose energy level is set equal to the acceptor's energy level, and in this case the breakdown voltage becomes a little higher in the region where the relative permittivity of the passivation layer is high. It is also shown that when the deep-acceptor's energy level is deeper, the breakdown voltage becomes higher in the highk region because the buffer leakage current becomes smaller.

Original languageEnglish
Title of host publicationInformatics, Electronics and Microsystems - TechConnect Briefs 2017
PublisherTechConnect
Pages31-34
Number of pages4
Volume4
ISBN (Electronic)9780998878218
Publication statusPublished - 2017
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
Duration: 2017 May 142017 May 17

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period17/5/1417/5/17

Keywords

  • Breakdown voltage
  • Deep acceptor
  • GaN HEMT
  • High-k passivation layer
  • Two-dimensional analysis

ASJC Scopus subject areas

  • Fuel Technology
  • Surfaces, Coatings and Films
  • Biotechnology
  • Fluid Flow and Transfer Processes

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