Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Hideyuki Hanawa, Yoshiki Satoh, Kazushige Horio

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ε<inf>r</inf> as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ε<inf>r</inf> is low, the breakdown voltage is determined by the impact ionization of carriers, and when ε<inf>r</inf> becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ε<inf>r</inf> increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ε<inf>r</inf> increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ε<inf>r</inf> region becomes higher because the buffer leakage current becomes smaller.

Original languageEnglish
Pages (from-to)96-99
Number of pages4
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 2015 Nov 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Passivation
Leakage currents
passivity
Buffers
leakage
buffers
breakdown
Electric breakdown
Impact ionization
electrical faults
Buffer layers
ionization
dimensional analysis
Permittivity
Electric fields
aluminum gallium nitride
permittivity
Electric potential

Keywords

  • Breakdown voltage
  • Buffer leakage current
  • GaN HEMT
  • High-k passivation layer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer. / Hanawa, Hideyuki; Satoh, Yoshiki; Horio, Kazushige.

In: Microelectronic Engineering, Vol. 147, 01.11.2015, p. 96-99.

Research output: Contribution to journalArticle

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