Abstract
A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ε<inf>r</inf> as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ε<inf>r</inf> is low, the breakdown voltage is determined by the impact ionization of carriers, and when ε<inf>r</inf> becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ε<inf>r</inf> increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ε<inf>r</inf> increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ε<inf>r</inf> region becomes higher because the buffer leakage current becomes smaller.
| Original language | English |
|---|---|
| Pages (from-to) | 96-99 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 147 |
| DOIs | |
| Publication status | Published - 2015 Nov 1 |
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Keywords
- Breakdown voltage
- Buffer leakage current
- GaN HEMT
- High-k passivation layer
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer. / Hanawa, Hideyuki; Satoh, Yoshiki; Horio, Kazushige.
In: Microelectronic Engineering, Vol. 147, 01.11.2015, p. 96-99.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer
AU - Hanawa, Hideyuki
AU - Satoh, Yoshiki
AU - Horio, Kazushige
PY - 2015/11/1
Y1 - 2015/11/1
N2 - A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer εr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when εr is low, the breakdown voltage is determined by the impact ionization of carriers, and when εr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as εr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as εr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high εr region becomes higher because the buffer leakage current becomes smaller.
AB - A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer εr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when εr is low, the breakdown voltage is determined by the impact ionization of carriers, and when εr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as εr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as εr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high εr region becomes higher because the buffer leakage current becomes smaller.
KW - Breakdown voltage
KW - Buffer leakage current
KW - GaN HEMT
KW - High-k passivation layer
UR - http://www.scopus.com/inward/record.url?scp=84928407139&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84928407139&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2015.04.064
DO - 10.1016/j.mee.2015.04.064
M3 - Article
VL - 147
SP - 96
EP - 99
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -