Abstract
A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.
| Original language | English |
|---|---|
| Title of host publication | EuMIC 2016 - 11th European Microwave Integrated Circuits Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 341-344 |
| Number of pages | 4 |
| ISBN (Electronic) | 9782874870446 |
| DOIs | |
| Publication status | Published - 2016 Dec 7 |
| Event | 11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom Duration: 2016 Oct 3 → 2016 Oct 4 |
Other
| Other | 11th European Microwave Integrated Circuits Conference, EuMIC 2016 |
|---|---|
| Country | United Kingdom |
| City | London |
| Period | 16/10/3 → 16/10/4 |
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Keywords
- breakdown voltage
- buffer leakage current
- GaN
- HEMT
- high-k passivation layer
- impact ionization of carriers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Instrumentation
Cite this
Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer. / Satoh, Yoshiki; Hanawa, Hideyuki; Horio, Kazushige.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 341-344 7777560.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer
AU - Satoh, Yoshiki
AU - Hanawa, Hideyuki
AU - Horio, Kazushige
PY - 2016/12/7
Y1 - 2016/12/7
N2 - A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.
AB - A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.
KW - breakdown voltage
KW - buffer leakage current
KW - GaN
KW - HEMT
KW - high-k passivation layer
KW - impact ionization of carriers
UR - http://www.scopus.com/inward/record.url?scp=85010423713&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010423713&partnerID=8YFLogxK
U2 - 10.1109/EuMIC.2016.7777560
DO - 10.1109/EuMIC.2016.7777560
M3 - Conference contribution
AN - SCOPUS:85010423713
SP - 341
EP - 344
BT - EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -