Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Yoshiki Satoh, Hideyuki Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.

Original languageEnglish
Title of host publicationEuMIC 2016 - 11th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages341-344
Number of pages4
ISBN (Electronic)9782874870446
DOIs
Publication statusPublished - 2016 Dec 7
Event11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom
Duration: 2016 Oct 32016 Oct 4

Other

Other11th European Microwave Integrated Circuits Conference, EuMIC 2016
CountryUnited Kingdom
CityLondon
Period16/10/316/10/4

Keywords

  • breakdown voltage
  • buffer leakage current
  • GaN
  • HEMT
  • high-k passivation layer
  • impact ionization of carriers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

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  • Cite this

    Satoh, Y., Hanawa, H., & Horio, K. (2016). Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp. 341-344). [7777560] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2016.7777560