Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Yoshiki Satoh; Hideyuki Hanawa; Kazushige Horio

doi:10.1109/EuMIC.2016.7777560

Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Yoshiki Satoh, Hideyuki Hanawa, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵ_r as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵ_r is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵ_r becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵ_r increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵ_r increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵ_r region becomes higher because the buffer leakage current becomes smaller.

Original language	English
Title of host publication	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	341-344
Number of pages	4
ISBN (Electronic)	9782874870446
DOIs	https://doi.org/10.1109/EuMIC.2016.7777560
Publication status	Published - 2016 Dec 7
Event	11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom Duration: 2016 Oct 3 → 2016 Oct 4

Other

Other	11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/Territory	United Kingdom
City	London
Period	16/10/3 → 16/10/4

Keywords

breakdown voltage
buffer leakage current
GaN
HEMT
high-k passivation layer
impact ionization of carriers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/EuMIC.2016.7777560

Cite this

Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer. / Satoh, Yoshiki; Hanawa, Hideyuki; Horio, Kazushige.

EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 341-344 7777560.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Satoh, Y, Hanawa, H & Horio, K 2016, Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777560, Institute of Electrical and Electronics Engineers Inc., pp. 341-344, 11th European Microwave Integrated Circuits Conference, EuMIC 2016, London, United Kingdom, 16/10/3. https://doi.org/10.1109/EuMIC.2016.7777560

@inproceedings{a674af5cf0a94902accc3fc972dd7210,

title = "Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer",

abstract = "A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.",

keywords = "breakdown voltage, buffer leakage current, GaN, HEMT, high-k passivation layer, impact ionization of carriers",

author = "Yoshiki Satoh and Hideyuki Hanawa and Kazushige Horio",

year = "2016",

month = dec,

day = "7",

doi = "10.1109/EuMIC.2016.7777560",

language = "English",

pages = "341--344",

booktitle = "EuMIC 2016 - 11th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "11th European Microwave Integrated Circuits Conference, EuMIC 2016 ; Conference date: 03-10-2016 Through 04-10-2016",

}

TY - GEN

T1 - Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

AU - Satoh, Yoshiki

AU - Hanawa, Hideyuki

AU - Horio, Kazushige

PY - 2016/12/7

Y1 - 2016/12/7

N2 - A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.

AB - A two-dimensional analysis of off-state breakdown characteristics in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, with the relative permittivity of passivation layer ϵr as a parameter. The analysis is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown performance. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases. It is also shown that when the gate voltage is more negative, the breakdown voltage in the high ϵr region becomes higher because the buffer leakage current becomes smaller.

KW - breakdown voltage

KW - buffer leakage current

KW - GaN

KW - HEMT

KW - high-k passivation layer

KW - impact ionization of carriers

UR - http://www.scopus.com/inward/record.url?scp=85010423713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010423713&partnerID=8YFLogxK

U2 - 10.1109/EuMIC.2016.7777560

DO - 10.1109/EuMIC.2016.7777560

M3 - Conference contribution

AN - SCOPUS:85010423713

SP - 341

EP - 344

BT - EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th European Microwave Integrated Circuits Conference, EuMIC 2016

Y2 - 3 October 2016 through 4 October 2016

ER -

Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this