Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs

H. Onodera, A. Nakajima, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)71-72
JournalProceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan
Publication statusPublished - 2011 May 23

Cite this

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title = "Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs",
author = "H. Onodera and A. Nakajima and K. Horio",
year = "2011",
month = "5",
day = "23",
language = "English",
pages = "71--72",
journal = "Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan",

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TY - JOUR

T1 - Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs

AU - Onodera, H.

AU - Nakajima, A.

AU - Horio, K.

PY - 2011/5/23

Y1 - 2011/5/23

M3 - Article

SP - 71

EP - 72

JO - Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan

JF - Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan

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