Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalElectronics Letters
Volume25
Issue number8
Publication statusPublished - 1989 Jan 1

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Heterojunction bipolar transistors
Relaxation time
Cutoff frequency
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor. / Horio, K.

In: Electronics Letters, Vol. 25, No. 8, 01.01.1989, p. 547-549.

Research output: Contribution to journalArticle

@article{100b074ada24449cbe16665760f1bfa2,
title = "Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor",
abstract = "Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.",
author = "K. Horio",
year = "1989",
month = "1",
day = "1",
language = "English",
volume = "25",
pages = "547--549",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "8",

}

TY - JOUR

T1 - Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

AU - Horio, K.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.

AB - Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.

UR - http://www.scopus.com/inward/record.url?scp=0024641433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024641433&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0024641433

VL - 25

SP - 547

EP - 549

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 8

ER -