Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

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Abstract

Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalElectronics Letters
Volume25
Issue number8
DOIs
Publication statusPublished - 1989 Jan 1

Keywords

  • Bipolar devices
  • Relaxation
  • Semiconductor devices
  • Transistors
  • materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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