Abstract
Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.
| Original language | English |
|---|---|
| Pages (from-to) | 547-549 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 25 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1989 Jan 1 |
Keywords
- Bipolar devices
- Relaxation
- Semiconductor devices
- Transistors
- materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering