Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Atsushi Nakajima; Keiichi Itagaki; Kazushige Horio

doi:10.1002/pssc.200982557

Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

Original language	English
Pages (from-to)	2840-2842
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	12
DOIs	https://doi.org/10.1002/pssc.200982557
Publication status	Published - 2009
Externally published	Yes
Event	15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lithuania Duration: 2009 Jun 15 → 2009 Jun 19

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200982557

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title = "Effects of field plate on buffer trapping in AlGaN/GaN HEMTs",

abstract = "Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.",

author = "Atsushi Nakajima and Keiichi Itagaki and Kazushige Horio",

year = "2009",

doi = "10.1002/pssc.200982557",

language = "English",

volume = "6",

pages = "2840--2842",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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number = "12",

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T1 - Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

AU - Nakajima, Atsushi

AU - Itagaki, Keiichi

AU - Horio, Kazushige

PY - 2009

Y1 - 2009

N2 - Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

AB - Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

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U2 - 10.1002/pssc.200982557

DO - 10.1002/pssc.200982557

M3 - Conference article

AN - SCOPUS:77955442894

SN - 1862-6351

VL - 6

SP - 2840

EP - 2842

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 15th International Semiconducting and Insulating Materials Conference, SIMC-XV

Y2 - 15 June 2009 through 19 June 2009

ER -

Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Abstract

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