Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

Original languageEnglish
Pages (from-to)2840-2842
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number12
DOIs
Publication statusPublished - 2009

Fingerprint

high electron mobility transistors
buffers
trapping
time lag

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. / Nakajima, Atsushi; Itagaki, Keiichi; Horio, Kazushige.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. 12, 2009, p. 2840-2842.

Research output: Contribution to journalArticle

@article{350e0bafb3ce471480e7c63b943b4484,
title = "Effects of field plate on buffer trapping in AlGaN/GaN HEMTs",
abstract = "Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.",
author = "Atsushi Nakajima and Keiichi Itagaki and Kazushige Horio",
year = "2009",
doi = "10.1002/pssc.200982557",
language = "English",
volume = "6",
pages = "2840--2842",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

AU - Nakajima, Atsushi

AU - Itagaki, Keiichi

AU - Horio, Kazushige

PY - 2009

Y1 - 2009

N2 - Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

AB - Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

UR - http://www.scopus.com/inward/record.url?scp=77955442894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955442894&partnerID=8YFLogxK

U2 - 10.1002/pssc.200982557

DO - 10.1002/pssc.200982557

M3 - Article

VL - 6

SP - 2840

EP - 2842

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 12

ER -