Effects of field plate on buffer trapping in AlGaN/GaN HEMTs

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that drain lag is reduced by introducing a field plate, because the buffer-trapping effects are reduced. It is also shown that buffer-related lag phenomena and current collapse are also reduced in the field-plate structure.

Original languageEnglish
Pages (from-to)2840-2842
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1
Event15th International Semiconducting and Insulating Materials Conference, SIMC-XV - Vilnius, Lithuania
Duration: 2009 Jun 152009 Jun 19

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ASJC Scopus subject areas

  • Condensed Matter Physics

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