Effects of Impact Ionization on I-V Characteristics of GaAs n-i-n Structures Including Hole Trap

Kazushige Horio, Hiroyuki Kusuki

Research output: Contribution to journalArticle

2 Citations (Scopus)


Numerical simulations of GaAs n-i-n structures with Cr deep acceptors (hole trap) in the i-layer are performed by considering the impact ionization of carriers. At low voltages, I-V curves show sublinear or saturated features, because the voltage is entirely applied along the reverse-biased n-i junction. When the deep-acceptor density is low, a steep rise of current occurs due to trap filling, while when the deep-acceptor density becomes high, the steep current rise occurs due to impact ionization of carriers at the reverse-biased n-i junction. In this case, the voltage for current rise becomes lower as the acceptor density becomes higher.

Original languageEnglish
Pages (from-to)541-543
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 1992 Oct


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this