Effects of impact-ionized carrier trapping by surface states on gate-lag and kink phenomena in GaAs MESFETs

A. Wakabayashi, Y. Mitani, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)327-330
JournalProceedings of ISSSE'01, Tokyo, Japan
Publication statusPublished - 2001 Jul 1

Cite this

Effects of impact-ionized carrier trapping by surface states on gate-lag and kink phenomena in GaAs MESFETs. / Wakabayashi, A.; Mitani, Y.; Horio, K.

In: Proceedings of ISSSE'01, Tokyo, Japan, 01.07.2001, p. 327-330.

Research output: Contribution to journalArticle

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