It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.
|Title of host publication||Unknown Host Publication Title|
|Editors||David C. Look, John S. Blakemore|
|Publisher||Shiva Publ Ltd, Nantwich, Engl Also|
|Number of pages||10|
|Publication status||Published - 1984 Dec 1|
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