EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

K. Horio, T. Ikoma, H. Yanai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
EditorsDavid C. Look, John S. Blakemore
PublisherShiva Publ Ltd, Nantwich, Engl Also
Pages354-363
Number of pages10
ISBN (Print)1850140316
Publication statusPublished - 1984 Dec 1

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horio, K., Ikoma, T., & Yanai, H. (1984). EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS. In D. C. Look, & J. S. Blakemore (Eds.), Unknown Host Publication Title (pp. 354-363). Shiva Publ Ltd, Nantwich, Engl Also.