Effects of indium incorporation on the optical properties of ZnO films

Yongge Cao, Lei Miao, Sakae Tanemura, Yasuhiko Hayashi, Masaki Tanemura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Transparent indium-doped ZnO (IZO) films with low In content (<6at%) were fabricated through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.

Original languageEnglish
Title of host publicationAICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials
PublisherTrans Tech Publications
Pages159-162
Number of pages4
ISBN (Print)0878499792, 9780878499793
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventAICAM 2005 - Asian International Conference on Advanced Materials - Beijing, China
Duration: 2005 Nov 32005 Nov 5

Publication series

NameAdvanced Materials Research
Volume11-12
ISSN (Print)1022-6680

Conference

ConferenceAICAM 2005 - Asian International Conference on Advanced Materials
CountryChina
CityBeijing
Period05/11/305/11/5

Keywords

  • Helicon magnetron sputtering
  • In-Zn-O (IZO) films
  • Optical transmission

ASJC Scopus subject areas

  • Engineering(all)

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