Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Naruhisa Miura, Toshiyuki Oishi, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.

Original languageEnglish
Pages (from-to)297-303
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume51
Issue number3
DOIs
Publication statusPublished - 2004 Mar 1

Keywords

  • Leakage currents
  • MODFETs
  • Rapid thermal annealing (RTA)
  • Schottky barriers
  • Schottky diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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