Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Naruhisa Miura, Toshiyuki Oishi, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.

Original languageEnglish
Pages (from-to)297-303
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume51
Issue number3
DOIs
Publication statusPublished - 2004 Mar
Externally publishedYes

Fingerprint

electric contacts
Diodes
Metals
Electrodes
annealing
Capacitance measurement
electrodes
Rapid thermal annealing
Voltage measurement
High electron mobility transistors
Auger electron spectroscopy
Schottky diodes
high electron mobility transistors
Leakage currents
metals
electrical measurement
Auger spectroscopy
electron spectroscopy
Heterojunctions
Electric properties

Keywords

  • Leakage currents
  • MODFETs
  • Rapid thermal annealing (RTA)
  • Schottky barriers
  • Schottky diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN. / Miura, Naruhisa; Oishi, Toshiyuki; Nanjo, Takuma; Suita, Muneyoshi; Abe, Yuji; Ozeki, Tatsuo; Ishikawa, Hiroyasu; Egawa, Takashi.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 3, 03.2004, p. 297-303.

Research output: Contribution to journalArticle

Miura, Naruhisa ; Oishi, Toshiyuki ; Nanjo, Takuma ; Suita, Muneyoshi ; Abe, Yuji ; Ozeki, Tatsuo ; Ishikawa, Hiroyasu ; Egawa, Takashi. / Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN. In: IEEE Transactions on Electron Devices. 2004 ; Vol. 51, No. 3. pp. 297-303.
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AU - Suita, Muneyoshi

AU - Abe, Yuji

AU - Ozeki, Tatsuo

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AB - Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.

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