Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

Kazushige Horio, H. Yanai

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.

Original languageEnglish
Title of host publicationCOMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
Pages563-572
Number of pages10
Volume10
Edition4
Publication statusPublished - 1991 Dec
Event7th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - NASECODE VII Transactions - Copper Mountain, CO, USA
Duration: 1991 Apr 11991 Apr 1

Other

Other7th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - NASECODE VII Transactions
CityCopper Mountain, CO, USA
Period91/4/191/4/1

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ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

Horio, K., & Yanai, H. (1991). Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels. In COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (4 ed., Vol. 10, pp. 563-572)