Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

K. Horio, H. Yanai

Research output: Contribution to journalReview article

Abstract

I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.

Original languageEnglish
Pages (from-to)563-572
Number of pages10
JournalCOMPEL - The international journal for computation and mathematics in electrical and electronic engineering
Volume10
Issue number4
DOIs
Publication statusPublished - 1991 Apr 1

ASJC Scopus subject areas

  • Computer Science Applications
  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering
  • Applied Mathematics

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