Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa, Kazuya Mito

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Effects of rapid-thermal-annealing (RTA) cover material on the properties of GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy (CBE) are studied in detail. Si wafer, GaAs wafer, and GaAs layer grown on GaAs substrate at low temperature are used as RTA cover materials. The results show that RTA cover material exerts significant influence on the properties of the QWs. The QWs using GaAs layer show not only the lower root mean square (RMS) roughness of sample surface but also the lower photoluminescence linewidth compared with those using GaAs wafer and Si wafer. The best RTA cover material is neither GaAs wafer nor Si wafer. The best RTA cover material is GaAs layer grown at low temperature from the viewpoints of both surface morphology and optical properties. The results obtained in this work are helpful for quality improvement of (In)GaNAs using RTA.

Original languageEnglish
Pages (from-to)229-234
Number of pages6
JournalJournal of Crystal Growth
Volume269
Issue number2-4
DOIs
Publication statusPublished - 2004 Sep 1
Externally publishedYes

Keywords

  • A1. Cover material
  • A1. Rapid thermal annealing
  • A3. Chemical beam epitaxy
  • A3. Quantum wells
  • B1. GaNAs

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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