EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs

Kazushige Horio, K. Satoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages353-356
Number of pages4
Publication statusPublished - 1996
EventProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr
Duration: 1996 Apr 291996 May 3

Other

OtherProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
CityToulouse, Fr
Period96/4/2996/5/3

Fingerprint

Substrates
Impact ionization

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horio, K., & Satoh, K. (1996). EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs. In Anon (Ed.), IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 353-356). Piscataway, NJ, United States: IEEE.

EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs. / Horio, Kazushige; Satoh, K.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. ed. / Anon. Piscataway, NJ, United States : IEEE, 1996. p. 353-356.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K & Satoh, K 1996, EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs. in Anon (ed.), IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. IEEE, Piscataway, NJ, United States, pp. 353-356, Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9, Toulouse, Fr, 96/4/29.
Horio K, Satoh K. EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs. In Anon, editor, IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Piscataway, NJ, United States: IEEE. 1996. p. 353-356
Horio, Kazushige ; Satoh, K. / EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. editor / Anon. Piscataway, NJ, United States : IEEE, 1996. pp. 353-356
@inproceedings{1d8c09104ede4fe4841369e34c4860af,
title = "EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs",
abstract = "Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.",
author = "Kazushige Horio and K. Satoh",
year = "1996",
language = "English",
pages = "353--356",
editor = "Anon",
booktitle = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",
publisher = "IEEE",

}

TY - GEN

T1 - EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs

AU - Horio, Kazushige

AU - Satoh, K.

PY - 1996

Y1 - 1996

N2 - Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.

AB - Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.

UR - http://www.scopus.com/inward/record.url?scp=0030418182&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030418182&partnerID=8YFLogxK

M3 - Conference contribution

SP - 353

EP - 356

BT - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

ER -