Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.
|Number of pages||4|
|Publication status||Published - 1996 Dec 1|
|Event||Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr|
Duration: 1996 Apr 29 → 1996 May 3
|Other||Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9|
|Period||96/4/29 → 96/5/3|
ASJC Scopus subject areas