EFfects of semi-insulating substrate on kink phenomena in GaAs MESFETs

K. Horio, K. Satoh

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.

Original languageEnglish
Pages353-356
Number of pages4
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr
Duration: 1996 Apr 291996 May 3

Other

OtherProceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
CityToulouse, Fr
Period96/4/2996/5/3

ASJC Scopus subject areas

  • Engineering(all)

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