Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior

Kazushige Horio, A. Nakajima, K. Itagaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication65th DRC Device Research Conference
Pages67-68
Number of pages2
DOIs
Publication statusPublished - 2007
Event65th DRC Device Research Conference - South Bend
Duration: 2007 Jun 182007 Jun 20

Other

Other65th DRC Device Research Conference
CitySouth Bend
Period07/6/1807/6/20

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High electron mobility transistors

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Horio, K., Nakajima, A., & Itagaki, K. (2007). Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior. In 65th DRC Device Research Conference (pp. 67-68). [4373653] https://doi.org/10.1109/DRC.2007.4373653

Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior. / Horio, Kazushige; Nakajima, A.; Itagaki, K.

65th DRC Device Research Conference. 2007. p. 67-68 4373653.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K, Nakajima, A & Itagaki, K 2007, Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior. in 65th DRC Device Research Conference., 4373653, pp. 67-68, 65th DRC Device Research Conference, South Bend, 07/6/18. https://doi.org/10.1109/DRC.2007.4373653
Horio, Kazushige ; Nakajima, A. ; Itagaki, K. / Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior. 65th DRC Device Research Conference. 2007. pp. 67-68
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