Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior

K. Horio, A. Nakajima, K. Itagaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication65th DRC Device Research Conference
Pages67-68
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event65th DRC Device Research Conference - South Bend, India
Duration: 2007 Jun 182007 Jun 20

Publication series

Name65th DRC Device Research Conference

Conference

Conference65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period07/6/1807/6/20

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Horio, K., Nakajima, A., & Itagaki, K. (2007). Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior. In 65th DRC Device Research Conference (pp. 67-68). [4373653] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373653