Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

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Abstract

Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

Original languageEnglish
Pages284-287
Number of pages4
Publication statusPublished - 2002 Dec 1
Event2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia
Duration: 2002 Jun 302002 Jul 5

Conference

Conference2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
CountrySlovakia
Period02/6/3002/7/5

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. 284-287. Paper presented at 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002), Slovakia.