Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Pages284-287
Number of pages4
Publication statusPublished - 2002
Event2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) -
Duration: 2002 Jun 302002 Jul 5

Other

Other2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
Period02/6/3002/7/5

Fingerprint

Surface states
Electric breakdown

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 284-287)

Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. / Mitani, Y.; Wakabayashi, A.; Horio, Kazushige.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. p. 284-287.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mitani, Y, Wakabayashi, A & Horio, K 2002, Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. pp. 284-287, 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002), 02/6/30.
Mitani Y, Wakabayashi A, Horio K. Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. p. 284-287
Mitani, Y. ; Wakabayashi, A. ; Horio, Kazushige. / Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. pp. 284-287
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