Effects of temperature on leakage current in AlGaN/GaN HEMTs

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)Tu-P2.068
JournalDefault journal
Publication statusPublished - 2003 May 1

Cite this

Arulkumaran, S., Egawa, T., Ishikawa, H., & Jimbo, T. (2003). Effects of temperature on leakage current in AlGaN/GaN HEMTs. Default journal, Tu-P2.068.

Effects of temperature on leakage current in AlGaN/GaN HEMTs. / Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.

In: Default journal, 01.05.2003, p. Tu-P2.068.

Research output: Contribution to journalArticle

Arulkumaran, S, Egawa, T, Ishikawa, H & Jimbo, T 2003, 'Effects of temperature on leakage current in AlGaN/GaN HEMTs', Default journal, pp. Tu-P2.068.
Arulkumaran S, Egawa T, Ishikawa H, Jimbo T. Effects of temperature on leakage current in AlGaN/GaN HEMTs. Default journal. 2003 May 1;Tu-P2.068.
Arulkumaran, S. ; Egawa, T. ; Ishikawa, H. ; Jimbo, T. / Effects of temperature on leakage current in AlGaN/GaN HEMTs. In: Default journal. 2003 ; pp. Tu-P2.068.
@article{140378d1438b4f9e865a01835220a1bd,
title = "Effects of temperature on leakage current in AlGaN/GaN HEMTs",
author = "S. Arulkumaran and T. Egawa and H. Ishikawa and T. Jimbo",
year = "2003",
month = "5",
day = "1",
language = "English",
pages = "Tu--P2.068",
journal = "Default journal",

}

TY - JOUR

T1 - Effects of temperature on leakage current in AlGaN/GaN HEMTs

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

PY - 2003/5/1

Y1 - 2003/5/1

M3 - Article

SP - Tu-P2.068

JO - Default journal

JF - Default journal

ER -