Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method

Tomomi Hattori, Emi Irisawa, Hiroyuki Nishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied the effects of thermal anneal and UV photon irradiation on GeO2-SiO2 thin films by a plasma CVD method. It was confirmed that annealing in the forming gas containing 5% H2 and 95% N2 at 1000 C for 4 hours could increase the density of neutral oxygen monovacancy (NOMV) that is responsible for UV photosensitivity and also decrease concentration of OH group that is the most abundant impurity in CVD films. On the other hand, the UV photosensitivity at 5.0 eV due to the NOMV was decreased by annealing in the atmosphere of nitrogen or oxygen. A UV-induced absorption band due to Ge E' center was observed at 6.3 eV, whose precursor is the NOMV. Also, two absorption bands associated with two kinds of germanium electron center (GEC) were induced at 4.7 and 5.7 eV. These absorption bands are responsible for UV-induced refractive index change. In particular, the amount of the induced Ge E' center in samples annealed in the forming gas was 20-fold larger than that of samples annealed in nitrogen. By UV irradiation through a phase mask, formation of Bragg gratings with a period of 0.5 μm was observed by an atomic force microscope (AFM). It was confirmed that the induction of the gratings was due to compression in the films by means of observing on the interface between un-irradiated and irradiated area by an AFM.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
Pages636-639
Number of pages4
Volume3
Publication statusPublished - 2005
Event2005 International Symposium on Electrical Insulating Materials, ISEIM 2005 - Kitakyushu
Duration: 2005 Jun 52005 Jun 9

Other

Other2005 International Symposium on Electrical Insulating Materials, ISEIM 2005
CityKitakyushu
Period05/6/505/6/9

Fingerprint

Plasma CVD
Bragg gratings
Photosensitivity
Silicon Dioxide
Silica
Oxygen
Absorption spectra
Thin films
Microscopes
Nitrogen
Gases
Irradiation
Annealing
Germanium
Masks
Chemical vapor deposition
Refractive index
Compaction
Photons
Impurities

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Hattori, T., Irisawa, E., & Nishikawa, H. (2005). Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method. In Proceedings of the International Symposium on Electrical Insulating Materials (Vol. 3, pp. 636-639)

Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method. / Hattori, Tomomi; Irisawa, Emi; Nishikawa, Hiroyuki.

Proceedings of the International Symposium on Electrical Insulating Materials. Vol. 3 2005. p. 636-639.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hattori, T, Irisawa, E & Nishikawa, H 2005, Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method. in Proceedings of the International Symposium on Electrical Insulating Materials. vol. 3, pp. 636-639, 2005 International Symposium on Electrical Insulating Materials, ISEIM 2005, Kitakyushu, 05/6/5.
Hattori T, Irisawa E, Nishikawa H. Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method. In Proceedings of the International Symposium on Electrical Insulating Materials. Vol. 3. 2005. p. 636-639
Hattori, Tomomi ; Irisawa, Emi ; Nishikawa, Hiroyuki. / Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method. Proceedings of the International Symposium on Electrical Insulating Materials. Vol. 3 2005. pp. 636-639
@inproceedings{ea27568d7fb444bbb238cd7fcf77ea9e,
title = "Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method",
abstract = "We studied the effects of thermal anneal and UV photon irradiation on GeO2-SiO2 thin films by a plasma CVD method. It was confirmed that annealing in the forming gas containing 5{\%} H2 and 95{\%} N2 at 1000 C for 4 hours could increase the density of neutral oxygen monovacancy (NOMV) that is responsible for UV photosensitivity and also decrease concentration of OH group that is the most abundant impurity in CVD films. On the other hand, the UV photosensitivity at 5.0 eV due to the NOMV was decreased by annealing in the atmosphere of nitrogen or oxygen. A UV-induced absorption band due to Ge E' center was observed at 6.3 eV, whose precursor is the NOMV. Also, two absorption bands associated with two kinds of germanium electron center (GEC) were induced at 4.7 and 5.7 eV. These absorption bands are responsible for UV-induced refractive index change. In particular, the amount of the induced Ge E' center in samples annealed in the forming gas was 20-fold larger than that of samples annealed in nitrogen. By UV irradiation through a phase mask, formation of Bragg gratings with a period of 0.5 μm was observed by an atomic force microscope (AFM). It was confirmed that the induction of the gratings was due to compression in the films by means of observing on the interface between un-irradiated and irradiated area by an AFM.",
author = "Tomomi Hattori and Emi Irisawa and Hiroyuki Nishikawa",
year = "2005",
language = "English",
volume = "3",
pages = "636--639",
booktitle = "Proceedings of the International Symposium on Electrical Insulating Materials",

}

TY - GEN

T1 - Effects of thermal anneal on the UV photosensitivity for writing of Bragg gratings on Ge-doped silica thin films by a plasma CVD method

AU - Hattori, Tomomi

AU - Irisawa, Emi

AU - Nishikawa, Hiroyuki

PY - 2005

Y1 - 2005

N2 - We studied the effects of thermal anneal and UV photon irradiation on GeO2-SiO2 thin films by a plasma CVD method. It was confirmed that annealing in the forming gas containing 5% H2 and 95% N2 at 1000 C for 4 hours could increase the density of neutral oxygen monovacancy (NOMV) that is responsible for UV photosensitivity and also decrease concentration of OH group that is the most abundant impurity in CVD films. On the other hand, the UV photosensitivity at 5.0 eV due to the NOMV was decreased by annealing in the atmosphere of nitrogen or oxygen. A UV-induced absorption band due to Ge E' center was observed at 6.3 eV, whose precursor is the NOMV. Also, two absorption bands associated with two kinds of germanium electron center (GEC) were induced at 4.7 and 5.7 eV. These absorption bands are responsible for UV-induced refractive index change. In particular, the amount of the induced Ge E' center in samples annealed in the forming gas was 20-fold larger than that of samples annealed in nitrogen. By UV irradiation through a phase mask, formation of Bragg gratings with a period of 0.5 μm was observed by an atomic force microscope (AFM). It was confirmed that the induction of the gratings was due to compression in the films by means of observing on the interface between un-irradiated and irradiated area by an AFM.

AB - We studied the effects of thermal anneal and UV photon irradiation on GeO2-SiO2 thin films by a plasma CVD method. It was confirmed that annealing in the forming gas containing 5% H2 and 95% N2 at 1000 C for 4 hours could increase the density of neutral oxygen monovacancy (NOMV) that is responsible for UV photosensitivity and also decrease concentration of OH group that is the most abundant impurity in CVD films. On the other hand, the UV photosensitivity at 5.0 eV due to the NOMV was decreased by annealing in the atmosphere of nitrogen or oxygen. A UV-induced absorption band due to Ge E' center was observed at 6.3 eV, whose precursor is the NOMV. Also, two absorption bands associated with two kinds of germanium electron center (GEC) were induced at 4.7 and 5.7 eV. These absorption bands are responsible for UV-induced refractive index change. In particular, the amount of the induced Ge E' center in samples annealed in the forming gas was 20-fold larger than that of samples annealed in nitrogen. By UV irradiation through a phase mask, formation of Bragg gratings with a period of 0.5 μm was observed by an atomic force microscope (AFM). It was confirmed that the induction of the gratings was due to compression in the films by means of observing on the interface between un-irradiated and irradiated area by an AFM.

UR - http://www.scopus.com/inward/record.url?scp=25644435015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25644435015&partnerID=8YFLogxK

M3 - Conference contribution

VL - 3

SP - 636

EP - 639

BT - Proceedings of the International Symposium on Electrical Insulating Materials

ER -