TY - JOUR
T1 - Electric resistivity measurements of sb2te3 and ge2sb2te5 melts using four-terminal method
AU - Endo, Rie
AU - Maeda, Shimpei
AU - Jinnai, Yuri
AU - Lan, Rui
AU - Kuwahara, Masashi
AU - Kobayashi, Yoshinao
AU - Susa, Masahiro
PY - 2010/6
Y1 - 2010/6
N2 - In this work, we aim to determine the electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5. Electric resistivities were measured using the fourterminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb2Te3 and Ge1:6Sb2:0Te5:0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb2Te3 has been determined to be 4:36≥0:14 μΩm at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge1:6SbSb2:0Te5:0 is smaller than that of Sb2Te3. It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies.
AB - In this work, we aim to determine the electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5. Electric resistivities were measured using the fourterminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb2Te3 and Ge1:6Sb2:0Te5:0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb2Te3 has been determined to be 4:36≥0:14 μΩm at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge1:6SbSb2:0Te5:0 is smaller than that of Sb2Te3. It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies.
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U2 - 10.1143/JJAP.49.065802
DO - 10.1143/JJAP.49.065802
M3 - Article
AN - SCOPUS:77955318049
SN - 0021-4922
VL - 49
SP - 658021
EP - 658027
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6 PART 1
ER -