Electric resistivity measurements of sb2te3 and ge2sb2te5 melts using four-terminal method

Rie Endo, Shimpei Maeda, Yuri Jinnai, Rui Lan, Masashi Kuwahara, Yoshinao Kobayashi, Masahiro Susa

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25 Citations (Scopus)


In this work, we aim to determine the electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5. Electric resistivities were measured using the fourterminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb2Te3 and Ge1:6Sb2:0Te5:0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb2Te3 has been determined to be 4:36≥0:14 μΩm at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge1:6SbSb2:0Te5:0 is smaller than that of Sb2Te3. It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies.

Original languageEnglish
Pages (from-to)658021-658027
Number of pages7
JournalJapanese Journal of Applied Physics
Issue number6 PART 1
Publication statusPublished - 2010 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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