Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

S. Arulkumaran, M. Miyoshi, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated and the uniformity of dc properties were studied for the first time on 4-in diameter sapphire substrate. A quarter of 4-in diameter AlGaN/GaN epitaxial wafer was used for the uniformity studies of HEMTs. The observed average maximum drain current density, extrinsic transconductance and threshold voltage values for HEMTs were 515 mA/mm, 197 mS/mm, and -2.30 V with standard deviations 9.34%, 4.82%, and 6.52%, respectively. The uniformity of Hall mobility across the 4-in wafer was 1322 cm2/Vs with a standard deviation of 4.27%. The uniformity of sheet resistance across 4-in diameter wafer, measured using Hall Effect was 575 Ω/sq. with a standard deviation 9.01%. The uniformity of HEMTs dc properties are in good correlation with the electrical characteristics of AlGaN/GaN heterostructures, which was obtained from the Hall Effect and capacitance-voltage (C-V) measurements.

Original languageEnglish
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number8
DOIs
Publication statusPublished - 2003 Aug
Externally publishedYes

Fingerprint

Aluminum Oxide
High electron mobility transistors
Sapphire
Hall effect
Substrates
Hall mobility
Capacitance measurement
Drain current
Sheet resistance
Voltage measurement
Transconductance
Threshold voltage
Heterojunctions
Current density
aluminum gallium nitride

Keywords

  • 4-in sapphire
  • Aluminum gallium nitride
  • Gallium nitride
  • HEMTs
  • MOCVD
  • Uniformity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate. / Arulkumaran, S.; Miyoshi, M.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

In: IEEE Electron Device Letters, Vol. 24, No. 8, 08.2003, p. 497-499.

Research output: Contribution to journalArticle

Arulkumaran, S. ; Miyoshi, M. ; Egawa, T. ; Ishikawa, Hiroyasu ; Jimbo, T. / Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate. In: IEEE Electron Device Letters. 2003 ; Vol. 24, No. 8. pp. 497-499.
@article{3554c6b582a64b75bd496d6b9165e74f,
title = "Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate",
abstract = "AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated and the uniformity of dc properties were studied for the first time on 4-in diameter sapphire substrate. A quarter of 4-in diameter AlGaN/GaN epitaxial wafer was used for the uniformity studies of HEMTs. The observed average maximum drain current density, extrinsic transconductance and threshold voltage values for HEMTs were 515 mA/mm, 197 mS/mm, and -2.30 V with standard deviations 9.34{\%}, 4.82{\%}, and 6.52{\%}, respectively. The uniformity of Hall mobility across the 4-in wafer was 1322 cm2/Vs with a standard deviation of 4.27{\%}. The uniformity of sheet resistance across 4-in diameter wafer, measured using Hall Effect was 575 Ω/sq. with a standard deviation 9.01{\%}. The uniformity of HEMTs dc properties are in good correlation with the electrical characteristics of AlGaN/GaN heterostructures, which was obtained from the Hall Effect and capacitance-voltage (C-V) measurements.",
keywords = "4-in sapphire, Aluminum gallium nitride, Gallium nitride, HEMTs, MOCVD, Uniformity",
author = "S. Arulkumaran and M. Miyoshi and T. Egawa and Hiroyasu Ishikawa and T. Jimbo",
year = "2003",
month = "8",
doi = "10.1109/LED.2003.815162",
language = "English",
volume = "24",
pages = "497--499",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

AU - Arulkumaran, S.

AU - Miyoshi, M.

AU - Egawa, T.

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

PY - 2003/8

Y1 - 2003/8

N2 - AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated and the uniformity of dc properties were studied for the first time on 4-in diameter sapphire substrate. A quarter of 4-in diameter AlGaN/GaN epitaxial wafer was used for the uniformity studies of HEMTs. The observed average maximum drain current density, extrinsic transconductance and threshold voltage values for HEMTs were 515 mA/mm, 197 mS/mm, and -2.30 V with standard deviations 9.34%, 4.82%, and 6.52%, respectively. The uniformity of Hall mobility across the 4-in wafer was 1322 cm2/Vs with a standard deviation of 4.27%. The uniformity of sheet resistance across 4-in diameter wafer, measured using Hall Effect was 575 Ω/sq. with a standard deviation 9.01%. The uniformity of HEMTs dc properties are in good correlation with the electrical characteristics of AlGaN/GaN heterostructures, which was obtained from the Hall Effect and capacitance-voltage (C-V) measurements.

AB - AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated and the uniformity of dc properties were studied for the first time on 4-in diameter sapphire substrate. A quarter of 4-in diameter AlGaN/GaN epitaxial wafer was used for the uniformity studies of HEMTs. The observed average maximum drain current density, extrinsic transconductance and threshold voltage values for HEMTs were 515 mA/mm, 197 mS/mm, and -2.30 V with standard deviations 9.34%, 4.82%, and 6.52%, respectively. The uniformity of Hall mobility across the 4-in wafer was 1322 cm2/Vs with a standard deviation of 4.27%. The uniformity of sheet resistance across 4-in diameter wafer, measured using Hall Effect was 575 Ω/sq. with a standard deviation 9.01%. The uniformity of HEMTs dc properties are in good correlation with the electrical characteristics of AlGaN/GaN heterostructures, which was obtained from the Hall Effect and capacitance-voltage (C-V) measurements.

KW - 4-in sapphire

KW - Aluminum gallium nitride

KW - Gallium nitride

KW - HEMTs

KW - MOCVD

KW - Uniformity

UR - http://www.scopus.com/inward/record.url?scp=0041886629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041886629&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.815162

DO - 10.1109/LED.2003.815162

M3 - Article

VL - 24

SP - 497

EP - 499

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -