Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)L351-L353
JournalJpn. J. Appl. Phys.
Volume39
Publication statusPublished - 2000 Apr 1

Cite this

Arulkumaran, S., Egawa, T., Zhao, G. Y., Ishikawa, H., Jimbo, T., & Umeno, M. (2000). Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. Jpn. J. Appl. Phys., 39, L351-L353.

Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. / Arulkumaran, S.; Egawa, T.; Zhao, G. Y.; Ishikawa, H.; Jimbo, T.; Umeno, M.

In: Jpn. J. Appl. Phys., Vol. 39, 01.04.2000, p. L351-L353.

Research output: Contribution to journalArticle

Arulkumaran, S, Egawa, T, Zhao, GY, Ishikawa, H, Jimbo, T & Umeno, M 2000, 'Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N', Jpn. J. Appl. Phys., vol. 39, pp. L351-L353.
Arulkumaran S, Egawa T, Zhao GY, Ishikawa H, Jimbo T, Umeno M. Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. Jpn. J. Appl. Phys. 2000 Apr 1;39:L351-L353.
Arulkumaran, S. ; Egawa, T. ; Zhao, G. Y. ; Ishikawa, H. ; Jimbo, T. ; Umeno, M. / Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. In: Jpn. J. Appl. Phys. 2000 ; Vol. 39. pp. L351-L353.
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