| Original language | English |
|---|---|
| Pages (from-to) | L351-L353 |
| Journal | Jpn. J. Appl. Phys. |
| Volume | 39 |
| Publication status | Published - 2000 Apr 1 |
Cite this
Arulkumaran, S., Egawa, T., Zhao, G. Y., Ishikawa, H., Jimbo, T., & Umeno, M. (2000). Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. Jpn. J. Appl. Phys., 39, L351-L353.
Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. / Arulkumaran, S.; Egawa, T.; Zhao, G. Y.; Ishikawa, H.; Jimbo, T.; Umeno, M.
In: Jpn. J. Appl. Phys., Vol. 39, 01.04.2000, p. L351-L353.Research output: Contribution to journal › Article
Arulkumaran, S, Egawa, T, Zhao, GY, Ishikawa, H, Jimbo, T & Umeno, M 2000, 'Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N', Jpn. J. Appl. Phys., vol. 39, pp. L351-L353.
Arulkumaran S, Egawa T, Zhao GY, Ishikawa H, Jimbo T, Umeno M. Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. Jpn. J. Appl. Phys. 2000 Apr 1;39:L351-L353.
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title = "Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N",
author = "S. Arulkumaran and T. Egawa and Zhao, {G. Y.} and H. Ishikawa and T. Jimbo and M. Umeno",
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AU - Zhao, G. Y.
AU - Ishikawa, H.
AU - Jimbo, T.
AU - Umeno, M.
PY - 2000/4/1
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