Abstract
Si interposer technology has the potential to enable highbandwidth and low-power image processing devices of the future, because a very high density system with an ultra-fine pitch (≤5um) wiring can be fabricated. However, the ultrafine pitch wiring may adversely affect the electrical performance of devices. This paper discusses the signal propagation properties of ultra-fine coplanar interconnects on Si interposers. A design chart of the interconnects, obtained from the viewpoint of maximum line length versus target operating frequency, is presented.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - Electronic Components and Technology Conference |
| Pages | 1648-1653 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - 2009 |
| Event | 2009 59th Electronic Components and Technology Conference, ECTC 2009 - San Diego, CA Duration: 2009 May 26 → 2009 May 29 |
Other
| Other | 2009 59th Electronic Components and Technology Conference, ECTC 2009 |
|---|---|
| City | San Diego, CA |
| Period | 09/5/26 → 09/5/29 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Electrical design and characterization of Si interposer for system-in-package (SiP). / Kato, Shinobu; Tango, Tomoyuki; Hasegawa, Kiyohisa; Bhandari, Ramesh K.; Sakai, Atsushi; Segawa, Hiroshi; Kariya, Takashi; Sudo, Toshio.
Proceedings - Electronic Components and Technology Conference. 2009. p. 1648-1653 5074236.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electrical design and characterization of Si interposer for system-in-package (SiP)
AU - Kato, Shinobu
AU - Tango, Tomoyuki
AU - Hasegawa, Kiyohisa
AU - Bhandari, Ramesh K.
AU - Sakai, Atsushi
AU - Segawa, Hiroshi
AU - Kariya, Takashi
AU - Sudo, Toshio
PY - 2009
Y1 - 2009
N2 - Si interposer technology has the potential to enable highbandwidth and low-power image processing devices of the future, because a very high density system with an ultra-fine pitch (≤5um) wiring can be fabricated. However, the ultrafine pitch wiring may adversely affect the electrical performance of devices. This paper discusses the signal propagation properties of ultra-fine coplanar interconnects on Si interposers. A design chart of the interconnects, obtained from the viewpoint of maximum line length versus target operating frequency, is presented.
AB - Si interposer technology has the potential to enable highbandwidth and low-power image processing devices of the future, because a very high density system with an ultra-fine pitch (≤5um) wiring can be fabricated. However, the ultrafine pitch wiring may adversely affect the electrical performance of devices. This paper discusses the signal propagation properties of ultra-fine coplanar interconnects on Si interposers. A design chart of the interconnects, obtained from the viewpoint of maximum line length versus target operating frequency, is presented.
UR - http://www.scopus.com/inward/record.url?scp=70349666679&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349666679&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2009.5074236
DO - 10.1109/ECTC.2009.5074236
M3 - Conference contribution
SN - 9781424444762
SP - 1648
EP - 1653
BT - Proceedings - Electronic Components and Technology Conference
ER -