Electrical properties of anatase TiO<inf>2</inf> films by atomic layer deposition and low annealing temperature

Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyo, Masayuki Kimura, Hiroyuki Yamada, Tomoji Ohishi

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15 Citations (Scopus)


In this paper, the authors studied anatase TiO<inf>2</inf> films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown TiO<inf>2</inf> films were of high purity; the carbon and nitrogen contents were within the x-ray photoelectron spectroscopy detection limit of 3-5 at. %. The anatase TiO<inf>2</inf> film fabricated by PDA at 500 °C in O<inf>2</inf> had a very high dielectric constant of >30 and was of high quality because it exhibited no hysteresis at its flatband voltage (V<inf>fb</inf>) and contained negligible defect charge. The positive V<inf>fb</inf> shift of anatase TiO<inf>2</inf> (0.08 V), caused by the bottom interface dipole at a TiO<inf>2</inf>/SiO<inf>2</inf> interface, was much smaller than those of Al<inf>2</inf>O<inf>3</inf> (0.72 V) and HfO<inf>2</inf> (0.29 V). However, the maximum V<inf>fb</inf> change of the anatase TiO<inf>2</inf> was greater than those of HfO<inf>2</inf> and HfSiO<inf>x</inf> because the TiO<inf>2</inf> contained more oxygen than the other materials.

Original languageEnglish
Article number03D121
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
Publication statusPublished - 2014 May 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

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