Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature

Toshihide Nabatame; Akihiko Ohi; Toyohiro Chikyo; Masayuki Kimura; Hiroyuki Yamada; Tomoji Ohishi

doi:10.1116/1.4869059

Electrical properties of anatase TiO₂ films by atomic layer deposition and low annealing temperature

Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyo, Masayuki Kimura, Hiroyuki Yamada, Tomoji Ohishi

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

In this paper, the authors studied anatase TiO₂ films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown TiO₂ films were of high purity; the carbon and nitrogen contents were within the x-ray photoelectron spectroscopy detection limit of 3-5 at. %. The anatase TiO₂ film fabricated by PDA at 500°C in O₂ had a very high dielectric constant of >30 and was of high quality because it exhibited no hysteresis at its flatband voltage (V _fb) and contained negligible defect charge. The positive V _fb shift of anatase TiO₂ (0.08 V), caused by the bottom interface dipole at a TiO₂/SiO₂ interface, was much smaller than those of Al₂O₃ (0.72 V) and HfO₂ (0.29 V). However, the maximum V_fb change of the anatase TiO ₂ was greater than those of HfO₂ and HfSiO_x because the TiO₂ contained more oxygen than the other materials.

Original language	English
Article number	03D121
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	32
Issue number	3
DOIs	https://doi.org/10.1116/1.4869059
Publication status	Published - 2014 May

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature",

abstract = "In this paper, the authors studied anatase TiO2 films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown TiO2 films were of high purity; the carbon and nitrogen contents were within the x-ray photoelectron spectroscopy detection limit of 3-5 at. %. The anatase TiO2 film fabricated by PDA at 500°C in O2 had a very high dielectric constant of >30 and was of high quality because it exhibited no hysteresis at its flatband voltage (V fb) and contained negligible defect charge. The positive V fb shift of anatase TiO2 (0.08 V), caused by the bottom interface dipole at a TiO2/SiO2 interface, was much smaller than those of Al2O3 (0.72 V) and HfO2 (0.29 V). However, the maximum Vfb change of the anatase TiO 2 was greater than those of HfO2 and HfSiOx because the TiO2 contained more oxygen than the other materials.",

author = "Toshihide Nabatame and Akihiko Ohi and Toyohiro Chikyo and Masayuki Kimura and Hiroyuki Yamada and Tomoji Ohishi",

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AU - Nabatame, Toshihide

AU - Ohi, Akihiko

AU - Chikyo, Toyohiro

AU - Kimura, Masayuki

AU - Yamada, Hiroyuki

AU - Ohishi, Tomoji

PY - 2014/5

Y1 - 2014/5

N2 - In this paper, the authors studied anatase TiO2 films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown TiO2 films were of high purity; the carbon and nitrogen contents were within the x-ray photoelectron spectroscopy detection limit of 3-5 at. %. The anatase TiO2 film fabricated by PDA at 500°C in O2 had a very high dielectric constant of >30 and was of high quality because it exhibited no hysteresis at its flatband voltage (V fb) and contained negligible defect charge. The positive V fb shift of anatase TiO2 (0.08 V), caused by the bottom interface dipole at a TiO2/SiO2 interface, was much smaller than those of Al2O3 (0.72 V) and HfO2 (0.29 V). However, the maximum Vfb change of the anatase TiO 2 was greater than those of HfO2 and HfSiOx because the TiO2 contained more oxygen than the other materials.

AB - In this paper, the authors studied anatase TiO2 films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown TiO2 films were of high purity; the carbon and nitrogen contents were within the x-ray photoelectron spectroscopy detection limit of 3-5 at. %. The anatase TiO2 film fabricated by PDA at 500°C in O2 had a very high dielectric constant of >30 and was of high quality because it exhibited no hysteresis at its flatband voltage (V fb) and contained negligible defect charge. The positive V fb shift of anatase TiO2 (0.08 V), caused by the bottom interface dipole at a TiO2/SiO2 interface, was much smaller than those of Al2O3 (0.72 V) and HfO2 (0.29 V). However, the maximum Vfb change of the anatase TiO 2 was greater than those of HfO2 and HfSiOx because the TiO2 contained more oxygen than the other materials.

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Electrical properties of anatase TiO₂ films by atomic layer deposition and low annealing temperature

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