Electrical transport ability of nanostructured potassium-doped titanium oxide film

So Yoon Lee, Ryosuke Matsuno, Kazuhiko Ishihara, Madoka Takai

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Abstract

Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of <0.27%; when the dopant concentration increased to >0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was <0.10% and the volume of the TiO2 phase when the dopant concentration was >0.18%.

Original languageEnglish
Article number25803
JournalApplied Physics Express
Volume4
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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