Abstract
Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of <0.27%; when the dopant concentration increased to >0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was <0.10% and the volume of the TiO2 phase when the dopant concentration was >0.18%.
| Original language | English |
|---|---|
| Article number | 25803 |
| Journal | Applied Physics Express |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Feb 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Electrical transport ability of nanostructured potassium-doped titanium oxide film. / Lee, So Yoon; Matsuno, Ryosuke; Ishihara, Kazuhiko; Takai, Madoka.
In: Applied Physics Express, Vol. 4, No. 2, 25803, 01.02.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical transport ability of nanostructured potassium-doped titanium oxide film
AU - Lee, So Yoon
AU - Matsuno, Ryosuke
AU - Ishihara, Kazuhiko
AU - Takai, Madoka
PY - 2011/2/1
Y1 - 2011/2/1
N2 - Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of <0.27%; when the dopant concentration increased to >0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was <0.10% and the volume of the TiO2 phase when the dopant concentration was >0.18%.
AB - Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of <0.27%; when the dopant concentration increased to >0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was <0.10% and the volume of the TiO2 phase when the dopant concentration was >0.18%.
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U2 - 10.1143/APEX.4.025803
DO - 10.1143/APEX.4.025803
M3 - Article
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 2
M1 - 25803
ER -