Electrical transport ability of nanostructured potassium-doped titanium oxide film

Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO₂ was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of <0.27%; when the dopant concentration increased to >0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO₂, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was <0.10% and the volume of the TiO₂ phase when the dopant concentration was >0.18%.