Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki, Daisuke Yata, Akio Fuwa

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

Original languageEnglish
Pages (from-to)1583-1587
Number of pages5
JournalMaterials Transactions
Volume44
Issue number8
Publication statusPublished - 2003 Aug
Externally publishedYes

Fingerprint

Tellurium compounds
tellurium compounds
Electrodeposition
electrodeposition
Copper
Tellurium
copper
tellurium
Current density
Metals
Ions
current density
conduction

Keywords

  • Copper telluride
  • Deposition process
  • Electrochemistry

ASJC Scopus subject areas

  • Materials Science(all)
  • Metals and Alloys

Cite this

Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control. / Ishizaki, Takahiro; Yata, Daisuke; Fuwa, Akio.

In: Materials Transactions, Vol. 44, No. 8, 08.2003, p. 1583-1587.

Research output: Contribution to journalArticle

@article{b71eef3a61bb4eb6add82c16031780e8,
title = "Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control",
abstract = "Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.",
keywords = "Copper telluride, Deposition process, Electrochemistry",
author = "Takahiro Ishizaki and Daisuke Yata and Akio Fuwa",
year = "2003",
month = "8",
language = "English",
volume = "44",
pages = "1583--1587",
journal = "Materials Transactions",
issn = "1345-9678",
publisher = "Japan Institute of Metals (JIM)",
number = "8",

}

TY - JOUR

T1 - Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

AU - Ishizaki, Takahiro

AU - Yata, Daisuke

AU - Fuwa, Akio

PY - 2003/8

Y1 - 2003/8

N2 - Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

AB - Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

KW - Copper telluride

KW - Deposition process

KW - Electrochemistry

UR - http://www.scopus.com/inward/record.url?scp=0141957202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141957202&partnerID=8YFLogxK

M3 - Article

VL - 44

SP - 1583

EP - 1587

JO - Materials Transactions

JF - Materials Transactions

SN - 1345-9678

IS - 8

ER -