Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki, Daisuke Yata, Akio Fuwa

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16 Citations (Scopus)


Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

Original languageEnglish
Pages (from-to)1583-1587
Number of pages5
JournalMaterials Transactions
Issue number8
Publication statusPublished - 2003 Aug
Externally publishedYes


  • Copper telluride
  • Deposition process
  • Electrochemistry

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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