Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki; Daisuke Yata; Akio Fuwa

doi:10.2320/matertrans.44.1583

Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki, Daisuke Yata, Akio Fuwa

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Copper-tellurium films were electrochemically deposited from a solution containing CuCl₂, TeO₂ and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu₂Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl₂] = 1.0 × 10^-3 M (= kmol m^-3), [TeO₂] = 4.0 × 10^-4 M, and pH = 1.

Original language	English
Pages (from-to)	1583-1587
Number of pages	5
Journal	Materials Transactions
Volume	44
Issue number	8
DOIs	https://doi.org/10.2320/matertrans.44.1583
Publication status	Published - 2003 Aug
Externally published	Yes

Keywords

Copper telluride
Deposition process
Electrochemistry

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.44.1583

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title = "Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control",

abstract = "Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.",

keywords = "Copper telluride, Deposition process, Electrochemistry",

author = "Takahiro Ishizaki and Daisuke Yata and Akio Fuwa",

year = "2003",

month = aug,

doi = "10.2320/matertrans.44.1583",

language = "English",

volume = "44",

pages = "1583--1587",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

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T1 - Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

AU - Ishizaki, Takahiro

AU - Yata, Daisuke

AU - Fuwa, Akio

PY - 2003/8

Y1 - 2003/8

N2 - Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

AB - Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

KW - Copper telluride

KW - Deposition process

KW - Electrochemistry

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JO - Materials Transactions

JF - Materials Transactions

IS - 8

ER -

Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Abstract

Keywords

ASJC Scopus subject areas

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