Electrodeposition of Bi 2Te 3 films from ammoniacal basic solutions containing nitrilotriacetic acid

Yasuhiro Ishimori, Takahiro Ishizaki, Takeshi Ohtomo, Akio Fuwa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Bi 2Te 3 thin films were electrochemically deposited from ammonia-alkaline solution containing Bi(NO 3) 3, TeO 2, nitrilotriacetic acid (NTA), in which Bi (III) - and Te (IV) -species were dissolving to form Bi (NTA) 2 3- complex and TeO 3 2-, respectively. This study revealed the relationship between [Bi]/[Te] ratio in the solution and the respective metal ratio in the deposited film. The [Bi]/[Te] ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions, i.e. the [Bi]/[Te] ratio in the solution was linearly related to that of the deposited film, where the partial current density originating from bismuth and tellurium ion was directly proportional to the concentration of respective ions. Dense and crystalline Bi 2Te 3 thin films with stoichiometric composition were electrodeposited at the potential ranging from - 0.6 to - 0.8 V from 5.0 × 10 -3 kmol m -3 Bi(NO 3) 3·5H 2O, 3.0 × 10 -3 kmol m -3 TeO 2 and 0.1 kmol m -3 NTA solution, with cathodic current efficiencies being above 85%.

Original languageEnglish
Pages (from-to)406-411
Number of pages6
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume68
Issue number6
DOIs
Publication statusPublished - 2004 Jun 1

Keywords

  • Bismuth telluride
  • Electrodeposition
  • Nitrilotriacetic acid

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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