Electrodeposition of CuInTe2 film from an acidic solution

Takahiro Ishizaki, N. Saito, A. Fuwa

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

Original languageEnglish
Pages (from-to)159-160
Number of pages2
JournalSurface and Coatings Technology
Volume182
Issue number2-3
DOIs
Publication statusPublished - 2004 Apr 22
Externally publishedYes

Fingerprint

Electrodeposition
electrodeposition
Indium
indium tellurides
Chemical analysis
indium
Copper
Energy gap
copper
Temperature
temperature
cupric chloride

Keywords

  • Copper-indium-telluride
  • Deposition process
  • Electrochemistry

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Electrodeposition of CuInTe2 film from an acidic solution. / Ishizaki, Takahiro; Saito, N.; Fuwa, A.

In: Surface and Coatings Technology, Vol. 182, No. 2-3, 22.04.2004, p. 159-160.

Research output: Contribution to journalArticle

Ishizaki, Takahiro ; Saito, N. ; Fuwa, A. / Electrodeposition of CuInTe2 film from an acidic solution. In: Surface and Coatings Technology. 2004 ; Vol. 182, No. 2-3. pp. 159-160.
@article{5f3467a981c445a1b39e810771ef86fb,
title = "Electrodeposition of CuInTe2 film from an acidic solution",
abstract = "Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.",
keywords = "Copper-indium-telluride, Deposition process, Electrochemistry",
author = "Takahiro Ishizaki and N. Saito and A. Fuwa",
year = "2004",
month = "4",
day = "22",
doi = "10.1016/j.surfcoat.2003.07.004",
language = "English",
volume = "182",
pages = "159--160",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "2-3",

}

TY - JOUR

T1 - Electrodeposition of CuInTe2 film from an acidic solution

AU - Ishizaki, Takahiro

AU - Saito, N.

AU - Fuwa, A.

PY - 2004/4/22

Y1 - 2004/4/22

N2 - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

AB - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

KW - Copper-indium-telluride

KW - Deposition process

KW - Electrochemistry

UR - http://www.scopus.com/inward/record.url?scp=2142755384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2142755384&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2003.07.004

DO - 10.1016/j.surfcoat.2003.07.004

M3 - Article

AN - SCOPUS:2142755384

VL - 182

SP - 159

EP - 160

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 2-3

ER -