Electroforming of Ni mold for imprint lithography using high-aspect-ratio PMMA microstructures fabricated by proton beam writing

Yusuke Tanabe, Hiroyuki Nishikawa, Yoshihiro Seki, Takahiro Satoh, Yasuyuki Ishii, Tomihiro Kamiya, Tohru Watanabe, Atsushi Sekiguchi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Proton beam writing (PBW) was applied for micromachining of a PMMA mother for Ni electroforming. Proton beam focused down to about 1 μm at beam energy of 1.0-3.0 MeV was used for PBW on a PMMA layer on Si or Cu substrate. Using modified techniques for developing of 15-30-μm thick resists exposed to PB and electroforming steps, fabrication of the Ni structures with aspect ratio up to 30 by electroforming with a 30-μm thick PMMA mother micromachined by PBW was successful. We also tried thermal imprint using a 15-μm thick Ni microstructure on Cu substrate with an aspect ratio of more than 4 on a PMMA film.

Original languageEnglish
Pages (from-to)2145-2148
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number8
DOIs
Publication statusPublished - 2011 Aug

Fingerprint

Electroforming
electroforming
Proton beams
Polymethyl Methacrylate
high aspect ratio
proton beams
Lithography
Aspect ratio
lithography
microstructure
Microstructure
aspect ratio
Micromachining
Substrates
micromachining
Fabrication
fabrication
energy

Keywords

  • Electroforming
  • Imprint lithography
  • Mold
  • Proton beam writing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Electroforming of Ni mold for imprint lithography using high-aspect-ratio PMMA microstructures fabricated by proton beam writing. / Tanabe, Yusuke; Nishikawa, Hiroyuki; Seki, Yoshihiro; Satoh, Takahiro; Ishii, Yasuyuki; Kamiya, Tomihiro; Watanabe, Tohru; Sekiguchi, Atsushi.

In: Microelectronic Engineering, Vol. 88, No. 8, 08.2011, p. 2145-2148.

Research output: Contribution to journalArticle

Tanabe, Yusuke ; Nishikawa, Hiroyuki ; Seki, Yoshihiro ; Satoh, Takahiro ; Ishii, Yasuyuki ; Kamiya, Tomihiro ; Watanabe, Tohru ; Sekiguchi, Atsushi. / Electroforming of Ni mold for imprint lithography using high-aspect-ratio PMMA microstructures fabricated by proton beam writing. In: Microelectronic Engineering. 2011 ; Vol. 88, No. 8. pp. 2145-2148.
@article{ea9d7908121f46e8835f366ad18a4d0a,
title = "Electroforming of Ni mold for imprint lithography using high-aspect-ratio PMMA microstructures fabricated by proton beam writing",
abstract = "Proton beam writing (PBW) was applied for micromachining of a PMMA mother for Ni electroforming. Proton beam focused down to about 1 μm at beam energy of 1.0-3.0 MeV was used for PBW on a PMMA layer on Si or Cu substrate. Using modified techniques for developing of 15-30-μm thick resists exposed to PB and electroforming steps, fabrication of the Ni structures with aspect ratio up to 30 by electroforming with a 30-μm thick PMMA mother micromachined by PBW was successful. We also tried thermal imprint using a 15-μm thick Ni microstructure on Cu substrate with an aspect ratio of more than 4 on a PMMA film.",
keywords = "Electroforming, Imprint lithography, Mold, Proton beam writing",
author = "Yusuke Tanabe and Hiroyuki Nishikawa and Yoshihiro Seki and Takahiro Satoh and Yasuyuki Ishii and Tomihiro Kamiya and Tohru Watanabe and Atsushi Sekiguchi",
year = "2011",
month = "8",
doi = "10.1016/j.mee.2011.01.019",
language = "English",
volume = "88",
pages = "2145--2148",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "8",

}

TY - JOUR

T1 - Electroforming of Ni mold for imprint lithography using high-aspect-ratio PMMA microstructures fabricated by proton beam writing

AU - Tanabe, Yusuke

AU - Nishikawa, Hiroyuki

AU - Seki, Yoshihiro

AU - Satoh, Takahiro

AU - Ishii, Yasuyuki

AU - Kamiya, Tomihiro

AU - Watanabe, Tohru

AU - Sekiguchi, Atsushi

PY - 2011/8

Y1 - 2011/8

N2 - Proton beam writing (PBW) was applied for micromachining of a PMMA mother for Ni electroforming. Proton beam focused down to about 1 μm at beam energy of 1.0-3.0 MeV was used for PBW on a PMMA layer on Si or Cu substrate. Using modified techniques for developing of 15-30-μm thick resists exposed to PB and electroforming steps, fabrication of the Ni structures with aspect ratio up to 30 by electroforming with a 30-μm thick PMMA mother micromachined by PBW was successful. We also tried thermal imprint using a 15-μm thick Ni microstructure on Cu substrate with an aspect ratio of more than 4 on a PMMA film.

AB - Proton beam writing (PBW) was applied for micromachining of a PMMA mother for Ni electroforming. Proton beam focused down to about 1 μm at beam energy of 1.0-3.0 MeV was used for PBW on a PMMA layer on Si or Cu substrate. Using modified techniques for developing of 15-30-μm thick resists exposed to PB and electroforming steps, fabrication of the Ni structures with aspect ratio up to 30 by electroforming with a 30-μm thick PMMA mother micromachined by PBW was successful. We also tried thermal imprint using a 15-μm thick Ni microstructure on Cu substrate with an aspect ratio of more than 4 on a PMMA film.

KW - Electroforming

KW - Imprint lithography

KW - Mold

KW - Proton beam writing

UR - http://www.scopus.com/inward/record.url?scp=79960041131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960041131&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.01.019

DO - 10.1016/j.mee.2011.01.019

M3 - Article

AN - SCOPUS:79960041131

VL - 88

SP - 2145

EP - 2148

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 8

ER -