Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

T.Osaka T.Osaka, N.Takano N.Takano, T.Kurokawa T.Kurokawa, T.Kaneko T.Kaneko, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)573-578
JournalJournal of the Electrochemical Society
Volume149
Publication statusPublished - 2002 Nov 1

Cite this

Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology. / T.Osaka, T.Osaka; N.Takano, N.Takano; T.Kurokawa, T.Kurokawa; T.Kaneko, T.Kaneko; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Journal of the Electrochemical Society, Vol. 149, 01.11.2002, p. 573-578.

Research output: Contribution to journalArticle

T.Osaka, T.Osaka ; N.Takano, N.Takano ; T.Kurokawa, T.Kurokawa ; T.Kaneko, T.Kaneko ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology. In: Journal of the Electrochemical Society. 2002 ; Vol. 149. pp. 573-578.
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AU - T.Kaneko, T.Kaneko

AU - K.Ueno, K.Ueno

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