Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

T.Osaka T.Osaka, N.Takano N.Takano, T.Kurokawa T.Kurokawa, T.Kaneko T.Kaneko, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	573-578
Journal	Journal of the Electrochemical Society
Volume	149
Publication status	Published - 2002 Nov 1

Cite this

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title = "Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology",

author = "T.Osaka T.Osaka and N.Takano N.Takano and T.Kurokawa T.Kurokawa and T.Kaneko T.Kaneko and K.Ueno K.Ueno and Kazuyoshi Ueno",

year = "2002",

month = nov,

day = "1",

language = "English",

volume = "149",

pages = "573--578",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

AU - T.Osaka, T.Osaka

AU - N.Takano, N.Takano

AU - T.Kurokawa, T.Kurokawa

AU - T.Kaneko, T.Kaneko

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 2002/11/1

Y1 - 2002/11/1

M3 - Article

SN - 0013-4651

VL - 149

SP - 573

EP - 578

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -