Abstract
Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.
| Original language | English |
|---|---|
| Pages (from-to) | 1628-1631 |
| Number of pages | 4 |
| Journal | Surface and Interface Analysis |
| Volume | 38 |
| Issue number | 12-13 |
| DOIs | |
| Publication status | Published - 2006 Dec |
| Externally published | Yes |
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Keywords
- Electron beam induced deposition
- Electron holography
- Nanowire
- Resistivity
- Transmission electron microscopy
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Colloid and Surface Chemistry
Cite this
Electron holographic study of the effect of contact resistance of connected nanowires on resistivity measurement. / Takeguchi, M.; Shimojo, Masayuki; Tanaka, M.; Che, R.; Zhang, W.; Furuya, K.
In: Surface and Interface Analysis, Vol. 38, No. 12-13, 12.2006, p. 1628-1631.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron holographic study of the effect of contact resistance of connected nanowires on resistivity measurement
AU - Takeguchi, M.
AU - Shimojo, Masayuki
AU - Tanaka, M.
AU - Che, R.
AU - Zhang, W.
AU - Furuya, K.
PY - 2006/12
Y1 - 2006/12
N2 - Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.
AB - Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.
KW - Electron beam induced deposition
KW - Electron holography
KW - Nanowire
KW - Resistivity
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=33845947352&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33845947352&partnerID=8YFLogxK
U2 - 10.1002/sia.2403
DO - 10.1002/sia.2403
M3 - Article
AN - SCOPUS:33845947352
VL - 38
SP - 1628
EP - 1631
JO - Surface and Interface Analysis
JF - Surface and Interface Analysis
SN - 0142-2421
IS - 12-13
ER -