Electron holographic study of the effect of contact resistance of connected nanowires on resistivity measurement

M. Takeguchi; M. Shimojo; M. Tanaka; R. Che; W. Zhang; K. Furuya

doi:10.1002/sia.2403

Electron holographic study of the effect of contact resistance of connected nanowires on resistivity measurement

M. Takeguchi, M. Shimojo, M. Tanaka, R. Che, W. Zhang, K. Furuya

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.

Original language	English
Pages (from-to)	1628-1631
Number of pages	4
Journal	Surface and Interface Analysis
Volume	38
Issue number	12-13
DOIs	https://doi.org/10.1002/sia.2403
Publication status	Published - 2006 Dec 1
Externally published	Yes

Keywords

Electron beam induced deposition
Electron holography
Nanowire
Resistivity
Transmission electron microscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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Cite this

Takeguchi, M., Shimojo, M., Tanaka, M., Che, R., Zhang, W., & Furuya, K. (2006). Electron holographic study of the effect of contact resistance of connected nanowires on resistivity measurement. Surface and Interface Analysis, 38(12-13), 1628-1631. https://doi.org/10.1002/sia.2403

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abstract = "Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.",

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author = "M. Takeguchi and M. Shimojo and M. Tanaka and R. Che and W. Zhang and K. Furuya",

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AU - Takeguchi, M.

AU - Shimojo, M.

AU - Tanaka, M.

AU - Che, R.

AU - Zhang, W.

AU - Furuya, K.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.

AB - Nanowires were formed on a tungsten tip and on an edge of a metal substrate by electron beam induced deposition (EBID), and were made to come in contact with each other in a specially designed transmission electron microscope (TEM) sample holder to perform the measurement of the resistivity of the nanowires. The resistivity of the contacted nanowires was very high (>0.01 Ωm) immediately after making contact. During the resistivity measurement, potential distribution around the contacted nanowires was observed by electron holography, and it was revealed that electric field concentrated on the contact point. It was due to the insulative character of the contact. The irradiation of an intense electron beam decreased such high contact resistance, and electron holographic observation showed that the electric field distribution became uniform.

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KW - Resistivity

KW - Transmission electron microscopy

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