Electron mobility on AlGaN/GaN heterostructure interface

G. Y. Zhao; H. Ishikawa; T. Egawa; T. Jimbo; M. Umeno

doi:10.1016/S1386-9477(00)00097-7

Electron mobility on AlGaN/GaN heterostructure interface

G. Y. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al_0.11Ga_0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm²/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

Original language	English
Pages (from-to)	963-966
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/S1386-9477(00)00097-7
Publication status	Published - 2000 May
Externally published	Yes
Event	MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn Duration: 1999 Jul 12 → 1999 Jul 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(00)00097-7

Cite this

@article{adabe743fc67459f82260ac9fd7906dc,

title = "Electron mobility on AlGaN/GaN heterostructure interface",

abstract = "High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.",

author = "Zhao, {G. Y.} and H. Ishikawa and T. Egawa and T. Jimbo and M. Umeno",

note = "Funding Information: This work was partially supported by a Grant-in-aid Scientific Research (C) (Grant No. 09650049) from The Ministry of Education, Science, Sports and Culture.; MSS9: The 9th International Conference on Modulated Semiconductor Structures ; Conference date: 12-07-1999 Through 16-07-1999",

year = "2000",

month = may,

doi = "10.1016/S1386-9477(00)00097-7",

language = "English",

volume = "7",

pages = "963--966",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Electron mobility on AlGaN/GaN heterostructure interface

AU - Zhao, G. Y.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

N1 - Funding Information: This work was partially supported by a Grant-in-aid Scientific Research (C) (Grant No. 09650049) from The Ministry of Education, Science, Sports and Culture.

PY - 2000/5

Y1 - 2000/5

N2 - High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

AB - High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

UR - http://www.scopus.com/inward/record.url?scp=0033691171&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033691171&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(00)00097-7

DO - 10.1016/S1386-9477(00)00097-7

M3 - Conference article

AN - SCOPUS:0033691171

SN - 1386-9477

VL - 7

SP - 963

EP - 966

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3

T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures

Y2 - 12 July 1999 through 16 July 1999

ER -

Electron mobility on AlGaN/GaN heterostructure interface

Abstract

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