Electron mobility on AlGaN/GaN heterostructure interface

G. Y. Zhao, Hiroyasu Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

Original languageEnglish
Pages (from-to)963-966
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
Externally publishedYes

Fingerprint

Hall mobility
Two dimensional electron gas
Electron mobility
electron mobility
Heterojunctions
Aluminum Oxide
Metallorganic chemical vapor deposition
Chemical analysis
Sapphire
metalorganic chemical vapor deposition
electron gas
Photoluminescence
sapphire
photoluminescence
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electron mobility on AlGaN/GaN heterostructure interface. / Zhao, G. Y.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.; Umeno, M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 7, No. 3, 05.2000, p. 963-966.

Research output: Contribution to journalArticle

Zhao, G. Y. ; Ishikawa, Hiroyasu ; Egawa, T. ; Jimbo, T. ; Umeno, M. / Electron mobility on AlGaN/GaN heterostructure interface. In: Physica E: Low-Dimensional Systems and Nanostructures. 2000 ; Vol. 7, No. 3. pp. 963-966.
@article{adabe743fc67459f82260ac9fd7906dc,
title = "Electron mobility on AlGaN/GaN heterostructure interface",
abstract = "High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.",
author = "Zhao, {G. Y.} and Hiroyasu Ishikawa and T. Egawa and T. Jimbo and M. Umeno",
year = "2000",
month = "5",
doi = "10.1016/S1386-9477(00)00097-7",
language = "English",
volume = "7",
pages = "963--966",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Electron mobility on AlGaN/GaN heterostructure interface

AU - Zhao, G. Y.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2000/5

Y1 - 2000/5

N2 - High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

AB - High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

UR - http://www.scopus.com/inward/record.url?scp=0033691171&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033691171&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(00)00097-7

DO - 10.1016/S1386-9477(00)00097-7

M3 - Article

AN - SCOPUS:0033691171

VL - 7

SP - 963

EP - 966

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3

ER -