Electron mobility on AlGaN/GaN heterostructure interface

G. Y. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

Original languageEnglish
Pages (from-to)963-966
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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