Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

T. Tomita, M. Iwami, M. Yamamoto, M. Deki, Shigeki Matsuo, S. Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, S. Onoda, T. Ohshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages239-242
Number of pages4
Volume645-648
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg
Duration: 2009 Oct 112009 Oct 16

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CityNurnberg
Period09/10/1109/10/16

Fingerprint

Ultrashort pulses
Silicon carbide
silicon carbides
Electronic properties
Single crystals
single crystals
electronics
lasers
Laser beam effects
Fourier transform infrared spectroscopy
Metals
Ions
Polarization
Degradation
silicon carbide
Lasers
electric contacts
crystallinity
infrared spectroscopy
degradation

Keywords

  • Electric conductivity
  • Femtosecond laser
  • Infrared spectra
  • Laser modification

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Tomita, T., Iwami, M., Yamamoto, M., Deki, M., Matsuo, S., Hashimoto, S., ... Ohshima, T. (2010). Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. In Materials Science Forum (Vol. 645-648, pp. 239-242). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.239

Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. / Tomita, T.; Iwami, M.; Yamamoto, M.; Deki, M.; Matsuo, Shigeki; Hashimoto, S.; Nakagawa, Y.; Kitada, T.; Isu, T.; Saito, S.; Sakai, K.; Onoda, S.; Ohshima, T.

Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 239-242 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tomita, T, Iwami, M, Yamamoto, M, Deki, M, Matsuo, S, Hashimoto, S, Nakagawa, Y, Kitada, T, Isu, T, Saito, S, Sakai, K, Onoda, S & Ohshima, T 2010, Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. in Materials Science Forum. vol. 645-648, Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 239-242, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, 09/10/11. https://doi.org/10.4028/www.scientific.net/MSF.645-648.239
Tomita T, Iwami M, Yamamoto M, Deki M, Matsuo S, Hashimoto S et al. Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. In Materials Science Forum. Vol. 645-648. Trans Tech Publications Ltd. 2010. p. 239-242. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.239
Tomita, T. ; Iwami, M. ; Yamamoto, M. ; Deki, M. ; Matsuo, Shigeki ; Hashimoto, S. ; Nakagawa, Y. ; Kitada, T. ; Isu, T. ; Saito, S. ; Sakai, K. ; Onoda, S. ; Ohshima, T. / Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. pp. 239-242 (Materials Science Forum).
@inproceedings{7f5694cd37de46edba6052a42909df3c,
title = "Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide",
abstract = "Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.",
keywords = "Electric conductivity, Femtosecond laser, Infrared spectra, Laser modification",
author = "T. Tomita and M. Iwami and M. Yamamoto and M. Deki and Shigeki Matsuo and S. Hashimoto and Y. Nakagawa and T. Kitada and T. Isu and S. Saito and K. Sakai and S. Onoda and T. Ohshima",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.239",
language = "English",
isbn = "0878492798",
volume = "645-648",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "239--242",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

AU - Tomita, T.

AU - Iwami, M.

AU - Yamamoto, M.

AU - Deki, M.

AU - Matsuo, Shigeki

AU - Hashimoto, S.

AU - Nakagawa, Y.

AU - Kitada, T.

AU - Isu, T.

AU - Saito, S.

AU - Sakai, K.

AU - Onoda, S.

AU - Ohshima, T.

PY - 2010

Y1 - 2010

N2 - Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

AB - Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

KW - Electric conductivity

KW - Femtosecond laser

KW - Infrared spectra

KW - Laser modification

UR - http://www.scopus.com/inward/record.url?scp=77955448393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955448393&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.645-648.239

DO - 10.4028/www.scientific.net/MSF.645-648.239

M3 - Conference contribution

AN - SCOPUS:77955448393

SN - 0878492798

SN - 9780878492794

VL - 645-648

T3 - Materials Science Forum

SP - 239

EP - 242

BT - Materials Science Forum

PB - Trans Tech Publications Ltd

ER -