Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

T. Tomita, M. Iwami, M. Yamamoto, M. Deki, S. Matsuo, S. Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, S. Onoda, T. Ohshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages239-242
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010 Jan 1
Externally publishedYes
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: 2009 Oct 112009 Oct 16

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Conference

Conference13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period09/10/1109/10/16

Keywords

  • Electric conductivity
  • Femtosecond laser
  • Infrared spectra
  • Laser modification

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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