Ellipsometric studies of optical properties of Er-doped ZnO thin films synthesized by sol-gel method

Lei Miao, Sakae Tanemura, Lili Zhao, Xiudi Xiao, Xiao Ting Zhang

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We have reported a low-cost and fast formation of highly efficient Er centers in ZnO thin films. As a high sensitivity tool for the detection of trace of Er dopant in ZnO film, spectroscopic ellipsometry is employed to disclose the systematic interrelationship of the crystallinity, dielectric function and optical band structure. Pure ZnO thin film shows very sharp band structure. The films with 0.05 at.% Er dopant, annealed at 600 C and 800 C, exhibit the similar tendency where the dopant level appears at the band tail. The band structure of the films with 0.05 at.% Er dopant, annealed at 400 C, is very close to that of pure ZnO. While the samples annealed at 1000 C are on the verge of amorphousness, and the flat curve of photon energy dependent εi(E) is observed. The strain effect caused by the formation of ErO6 pseudo-octahedron structure greatly affects the value of dielectric constants. Therefore, SE analyses reveal significant effect of Er doping and annealing temperatures on the modification of optical band structure, dielectric property and optically active center in ZnO films.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalThin Solid Films
Volume543
DOIs
Publication statusPublished - 2013 Sep 30
Externally publishedYes

Keywords

  • Dielectric function
  • Optical band-gap
  • Spectroscopic ellipsometry
  • Urbach tail
  • ZnO:Er thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Ellipsometric studies of optical properties of Er-doped ZnO thin films synthesized by sol-gel method'. Together they form a unique fingerprint.

Cite this