Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence

Makoto Fujimaki, Yoshimichi Ohki, Hiroyuki Nishikawa

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The energy states of oxygen-deficient type defects in the vacuum ultraviolet region are discussed based on the experimental results of vacuum ultraviolet absorption, temperature dependence of the photoluminescence (PL) intensities at 4.3 and 3.1 eV, and lifetimes of the PLs. It was found that the oxygen-deficient type glass has a large absorption tail above 6 eV in addition to an absorption band around 5 eV and that the 3.1 eV PL intensity scarcely depends on temperature when excited above 6 eV. It was also found that the lifetime of the 4.3 eV PL is 9 ns and that of the 3.1 eV PL is 113 μs irrespective of the excitation photon energy. The obtained results are explainable by assuming that electrons excited into the conduction band by photons above 6 eV contribute to the PLs.

Original languageEnglish
Pages (from-to)1042-1046
Number of pages5
JournalJournal of Applied Physics
Volume81
Issue number3
Publication statusPublished - 1997 Feb 1
Externally publishedYes

Fingerprint

photoluminescence
glass
life (durability)
vacuum
energy
ultraviolet absorption
photons
oxygen
conduction bands
absorption spectra
temperature dependence
defects
excitation
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence. / Fujimaki, Makoto; Ohki, Yoshimichi; Nishikawa, Hiroyuki.

In: Journal of Applied Physics, Vol. 81, No. 3, 01.02.1997, p. 1042-1046.

Research output: Contribution to journalArticle

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