Energy transport simulation for graded HBT's: importance of setting adequate values for transport parameters

Kazushige Horio, Tadayuki Okada, Akio Nakatani

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.

Original languageEnglish
Pages (from-to)641-647
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume46
Issue number4
DOIs
Publication statusPublished - 1999

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Chemical analysis
Doping (additives)
Electrons
simulation
Electron mobility
Cutoff frequency
electron mobility
Relaxation time
interpolation
valleys
Monte Carlo method
aluminum gallium arsenides
energy
Interpolation
Energy gap
Monte Carlo methods
cut-off

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Energy transport simulation for graded HBT's : importance of setting adequate values for transport parameters. / Horio, Kazushige; Okada, Tadayuki; Nakatani, Akio.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 4, 1999, p. 641-647.

Research output: Contribution to journalArticle

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