Abstract
The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 590-595 |
| Number of pages | 6 |
| Journal | Surface Science |
| Volume | 196 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1988 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry