Enhanced excitonic optical nonlinearity and exciton dynamics in semiconductor microstructures

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.

Original languageEnglish
Pages (from-to)590-595
Number of pages6
JournalSurface Science
Volume196
Issue number1-3
DOIs
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Excitons
nonlinearity
excitons
Semiconductor materials
microstructure
Microstructure
phase conjugation
oscillator strengths
Luminescence
luminescence
magnetic permeability
decay
LDS 751

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Enhanced excitonic optical nonlinearity and exciton dynamics in semiconductor microstructures. / Takagahara, Toshihide.

In: Surface Science, Vol. 196, No. 1-3, 1988, p. 590-595.

Research output: Contribution to journalArticle

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