Enhanced Optical Nonlinearities in Quantum Well Structures due to Exciton Localization

Toshihide Takagahara, Masami Kumagai, Eiichi Hanamura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The third-order optical nonlinearity χ<sup>(3)</sup> of bound excitons can have a large value as a consequence of double multiplication of the giant oscillator strength because the χ<sup>(3)</sup> process involves double repetition of the excitonic transition. A proposal to use the bound exciton level in the sheet-doped quantum well structure is made to obtain a large χ<sup>(3)</sup> value.

Original languageEnglish
Pages (from-to)983-987
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume23
Issue number6
DOIs
Publication statusPublished - 1987
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
nonlinearity
excitons
quantum wells
Electron transitions
multiplication
oscillator strengths
proposals
repetition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced Optical Nonlinearities in Quantum Well Structures due to Exciton Localization. / Takagahara, Toshihide; Kumagai, Masami; Hanamura, Eiichi.

In: IEEE Journal of Quantum Electronics, Vol. 23, No. 6, 1987, p. 983-987.

Research output: Contribution to journalArticle

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