Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate

Shrikant Saini, Paolo Mele, Hiroaki Honda, Dave J. Henry, Patrick E. Hopkins, Leopoldo Molina-Luna, Kaname Matsumoto, Koji Miyazaki, Ataru Ichinose

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

2% Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.

Original languageEnglish
Article number060306
JournalJapanese Journal of Applied Physics
Volume53
Issue number6
DOIs
Publication statusPublished - 2014 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Saini, S., Mele, P., Honda, H., Henry, D. J., Hopkins, P. E., Molina-Luna, L., Matsumoto, K., Miyazaki, K., & Ichinose, A. (2014). Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate. Japanese Journal of Applied Physics, 53(6), [060306]. https://doi.org/10.7567/JJAP.53.060306