Enhanced thermoelectric properties of Al-doped ZnO thin films

P. Mele; S. Saini; H. Abe; H. Honda; K. Matsumoto; K. Miyazaki; H. Hagino; A. Ichinose

doi:10.1557/opl.2013.989

Enhanced thermoelectric properties of Al-doped ZnO thin films

P. Mele, S. Saini, H. Abe, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO₃ and Al₂O₃ substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (T_dep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al₂O₃ films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10^-3 Wm^-1K^-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10^-3 Wm^-1K^-2 at 600 K, surpassing the best AZO film previously reported in literature.

Original language	English
Title of host publication	Nanoscale Thermoelectric Materials
Subtitle of host publication	Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation
Pages	57-64
Number of pages	8
DOIs	https://doi.org/10.1557/opl.2013.989
Publication status	Published - 2013 Dec 1
Event	2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1543
ISSN (Print)	0272-9172

Other

Other	2013 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	13/4/1 → 13/4/5

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Mele, P., Saini, S., Abe, H., Honda, H., Matsumoto, K., Miyazaki, K., Hagino, H., & Ichinose, A. (2013). Enhanced thermoelectric properties of Al-doped ZnO thin films. In Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation (pp. 57-64). (Materials Research Society Symposium Proceedings; Vol. 1543). https://doi.org/10.1557/opl.2013.989

Enhanced thermoelectric properties of Al-doped ZnO thin films. / Mele, P.; Saini, S.; Abe, H.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation. 2013. p. 57-64 (Materials Research Society Symposium Proceedings; Vol. 1543).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mele, P, Saini, S, Abe, H, Honda, H, Matsumoto, K, Miyazaki, K, Hagino, H & Ichinose, A 2013, Enhanced thermoelectric properties of Al-doped ZnO thin films. in Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation. Materials Research Society Symposium Proceedings, vol. 1543, pp. 57-64, 2013 MRS Spring Meeting, San Francisco, CA, United States, 13/4/1. https://doi.org/10.1557/opl.2013.989

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abstract = "We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.",

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AU - Saini, S.

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AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Hagino, H.

AU - Ichinose, A.

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N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

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Access to Document

10.1557/opl.2013.989