Abstract
We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.
| Original language | English |
|---|---|
| Title of host publication | Nanoscale Thermoelectric Materials |
| Subtitle of host publication | Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation |
| Pages | 57-64 |
| Number of pages | 8 |
| Volume | 1543 |
| DOIs | |
| Publication status | Published - 2013 Dec 1 |
| Externally published | Yes |
| Event | 2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5 |
Other
| Other | 2013 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 13/4/1 → 13/4/5 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Enhanced thermoelectric properties of Al-doped ZnO thin films. / Mele, Paolo; Saini, S.; Abe, H.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.
Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation. Vol. 1543 2013. p. 57-64.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Enhanced thermoelectric properties of Al-doped ZnO thin films
AU - Mele, Paolo
AU - Saini, S.
AU - Abe, H.
AU - Honda, H.
AU - Matsumoto, K.
AU - Miyazaki, K.
AU - Hagino, H.
AU - Ichinose, A.
PY - 2013/12/1
Y1 - 2013/12/1
N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.
AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.
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U2 - 10.1557/opl.2013.989
DO - 10.1557/opl.2013.989
M3 - Conference contribution
SN - 9781605115207
VL - 1543
SP - 57
EP - 64
BT - Nanoscale Thermoelectric Materials
ER -