Enhanced thermoelectric properties of Al-doped ZnO thin films

P. Mele, S. Saini, H. Abe, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Original languageEnglish
Title of host publicationNanoscale Thermoelectric Materials
Subtitle of host publicationThermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation
Number of pages8
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2013 Apr 12013 Apr 5

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2013 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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