Enhanced thermoelectric properties of Al-doped ZnO thin films

P. Mele; S. Saini; H. Abe; H. Honda; K. Matsumoto; K. Miyazaki; H. Hagino; A. Ichinose

doi:10.1557/opl.2013.989

Enhanced thermoelectric properties of Al-doped ZnO thin films

P. Mele, S. Saini, H. Abe, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO₃ and Al₂O₃ substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (T_dep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al₂O₃ films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10^-3 Wm^-1K^-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10^-3 Wm^-1K^-2 at 600 K, surpassing the best AZO film previously reported in literature.

Original language	English
Title of host publication	Nanoscale Thermoelectric Materials
Subtitle of host publication	Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation
Pages	57-64
Number of pages	8
DOIs	https://doi.org/10.1557/opl.2013.989
Publication status	Published - 2013 Dec 1
Externally published	Yes
Event	2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1543
ISSN (Print)	0272-9172

Other

Other	2013 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	13/4/1 → 13/4/5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2013.989

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Mele, P., Saini, S., Abe, H., Honda, H., Matsumoto, K., Miyazaki, K., Hagino, H., & Ichinose, A. (2013). Enhanced thermoelectric properties of Al-doped ZnO thin films. In Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation (pp. 57-64). (Materials Research Society Symposium Proceedings; Vol. 1543). https://doi.org/10.1557/opl.2013.989

Enhanced thermoelectric properties of Al-doped ZnO thin films. / Mele, P.; Saini, S.; Abe, H.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation. 2013. p. 57-64 (Materials Research Society Symposium Proceedings; Vol. 1543).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mele, P, Saini, S, Abe, H, Honda, H, Matsumoto, K, Miyazaki, K, Hagino, H & Ichinose, A 2013, Enhanced thermoelectric properties of Al-doped ZnO thin films. in Nanoscale Thermoelectric Materials: Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation. Materials Research Society Symposium Proceedings, vol. 1543, pp. 57-64, 2013 MRS Spring Meeting, San Francisco, CA, United States, 13/4/1. https://doi.org/10.1557/opl.2013.989

@inproceedings{6e27e59ab0554944b72f227801d29ae0,

title = "Enhanced thermoelectric properties of Al-doped ZnO thin films",

abstract = "We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.",

author = "P. Mele and S. Saini and H. Abe and H. Honda and K. Matsumoto and K. Miyazaki and H. Hagino and A. Ichinose",

year = "2013",

month = dec,

day = "1",

doi = "10.1557/opl.2013.989",

language = "English",

isbn = "9781605115207",

series = "Materials Research Society Symposium Proceedings",

pages = "57--64",

booktitle = "Nanoscale Thermoelectric Materials",

note = "2013 MRS Spring Meeting ; Conference date: 01-04-2013 Through 05-04-2013",

}

TY - GEN

T1 - Enhanced thermoelectric properties of Al-doped ZnO thin films

AU - Mele, P.

AU - Saini, S.

AU - Abe, H.

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Hagino, H.

AU - Ichinose, A.

PY - 2013/12/1

Y1 - 2013/12/1

N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

UR - http://www.scopus.com/inward/record.url?scp=84893372954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893372954&partnerID=8YFLogxK

U2 - 10.1557/opl.2013.989

DO - 10.1557/opl.2013.989

M3 - Conference contribution

AN - SCOPUS:84893372954

SN - 9781605115207

T3 - Materials Research Society Symposium Proceedings

SP - 57

EP - 64

BT - Nanoscale Thermoelectric Materials

T2 - 2013 MRS Spring Meeting

Y2 - 1 April 2013 through 5 April 2013

ER -