TY - GEN
T1 - Enhanced thermoelectric properties of Al-doped ZnO thin films
AU - Mele, P.
AU - Saini, S.
AU - Abe, H.
AU - Honda, H.
AU - Matsumoto, K.
AU - Miyazaki, K.
AU - Hagino, H.
AU - Ichinose, A.
PY - 2013/12/1
Y1 - 2013/12/1
N2 - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.
AB - We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.
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U2 - 10.1557/opl.2013.989
DO - 10.1557/opl.2013.989
M3 - Conference contribution
AN - SCOPUS:84893372954
SN - 9781605115207
T3 - Materials Research Society Symposium Proceedings
SP - 57
EP - 64
BT - Nanoscale Thermoelectric Materials
T2 - 2013 MRS Spring Meeting
Y2 - 1 April 2013 through 5 April 2013
ER -