Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-k Passivation Layer and High Acceptor Density in Buffer Layer

Engineering & Materials Science

• Buffer layers 95%
• Electric breakdown 75%
• Electric fields 30%
• High electron mobility transistors 77%
• Passivation 80%
• Permittivity 11%

Chemical Compounds

• Breakdown Voltage 100%
• Buffer Solution 43%
• Chemical Passivation 67%
• Dielectric Constant 10%
• Electric Field 30%
• Length 6%
• Plate Like Crystal 52%
• Reduction 5%
• Time 4%